STGW60V60DF Allicdata Electronics
Allicdata Part #:

497-13768-5-ND

Manufacturer Part#:

STGW60V60DF

Price: $ 4.16
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 80A 375W TO247
More Detail: IGBT Trench Field Stop 600V 80A 375W Through Hole ...
DataSheet: STGW60V60DF datasheetSTGW60V60DF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.16430
10 +: $ 4.03937
100 +: $ 3.95608
1000 +: $ 3.87280
10000 +: $ 3.74787
Stock 1000Can Ship Immediately
$ 4.16
Specifications
Power - Max: 375W
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 74ns
Test Condition: 400V, 60A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 60ns/208ns
Gate Charge: 334nC
Input Type: Standard
Switching Energy: 750µJ (on), 550µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Current - Collector Pulsed (Icm): 240A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The STGW60V60DF is a single insulated gate bipolar transistor (IGBT). This type of transistor uses voltage instead of current flow, like conventional transistors. It is capable of using a low gate voltage of 4.5V to control a high collector to emitter voltage. This enables it to operate with high efficiency and low power dissipation.

The STGW60V60DF is suitable for many different types of applications, such as in electrical power distribution and it can be used as a switch. It is also suitable for use in motor control circuits as well as in industrial machinery and robotics. This device can also be used in applications involving the control of large currents, such as those found in power supply systems.

The STGW60V60DF is composed of a PN junction and a gate source, which act together to form an IGBT. When a voltage is applied to the gate, electrons flow from the emitter to the collector. This action allows current flow. The electrons remain in the collector until the voltage is removed. The flow of electrons is controlled by the IGBT, enabling it to modulate power to the electrical system it is connected to.

The STGW60V60DF offers several benefits, such as high efficiency, low power consumption, good switching characteristics, and improved reliability. Compared to other IGBTs, this device is capable of operating with lower collector to emitter voltage. This helps reduce power consumption and ensure the device runs at an optimal temperature. In addition, the device limits conduction losses and enables faster switching compared to other IGBTs.

The STGW60V60DF is a reliable device that offers high performance and is suitable for a wide variety of applications. It can be used as a switch and is suitable for applications such as motor control and power distribution. It also offers a low gate voltage that enables it to be used in high efficiency applications, while also ensuring low power consumption. The STGW60V60DF has improved reliability, making it suitable for many applications.

The specific data is subject to PDF, and the above content is for reference

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