| Allicdata Part #: | 497-13768-5-ND |
| Manufacturer Part#: |
STGW60V60DF |
| Price: | $ 4.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | IGBT 600V 80A 375W TO247 |
| More Detail: | IGBT Trench Field Stop 600V 80A 375W Through Hole ... |
| DataSheet: |  STGW60V60DF Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 1 +: | $ 4.16430 |
| 10 +: | $ 3.74094 |
| 100 +: | $ 3.06489 |
| 500 +: | $ 2.60905 |
| 1000 +: | $ 2.20042 |
| Power - Max: | 375W |
| Supplier Device Package: | TO-247 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Reverse Recovery Time (trr): | 74ns |
| Test Condition: | 400V, 60A, 4.7 Ohm, 15V |
| Td (on/off) @ 25°C: | 60ns/208ns |
| Gate Charge: | 334nC |
| Input Type: | Standard |
| Switching Energy: | 750µJ (on), 550µJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 60A |
| Current - Collector Pulsed (Icm): | 240A |
| Current - Collector (Ic) (Max): | 80A |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| IGBT Type: | Trench Field Stop |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The STGW60V60DF is a single insulated gate bipolar transistor (IGBT). This type of transistor uses voltage instead of current flow, like conventional transistors. It is capable of using a low gate voltage of 4.5V to control a high collector to emitter voltage. This enables it to operate with high efficiency and low power dissipation.
The STGW60V60DF is suitable for many different types of applications, such as in electrical power distribution and it can be used as a switch. It is also suitable for use in motor control circuits as well as in industrial machinery and robotics. This device can also be used in applications involving the control of large currents, such as those found in power supply systems.
The STGW60V60DF is composed of a PN junction and a gate source, which act together to form an IGBT. When a voltage is applied to the gate, electrons flow from the emitter to the collector. This action allows current flow. The electrons remain in the collector until the voltage is removed. The flow of electrons is controlled by the IGBT, enabling it to modulate power to the electrical system it is connected to.
The STGW60V60DF offers several benefits, such as high efficiency, low power consumption, good switching characteristics, and improved reliability. Compared to other IGBTs, this device is capable of operating with lower collector to emitter voltage. This helps reduce power consumption and ensure the device runs at an optimal temperature. In addition, the device limits conduction losses and enables faster switching compared to other IGBTs.
The STGW60V60DF is a reliable device that offers high performance and is suitable for a wide variety of applications. It can be used as a switch and is suitable for applications such as motor control and power distribution. It also offers a low gate voltage that enables it to be used in high efficiency applications, while also ensuring low power consumption. The STGW60V60DF has improved reliability, making it suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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|---|
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