Allicdata Part #: | 497-12423-ND |
Manufacturer Part#: |
STGW50H60DF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 600V 100A 360W TO247 |
More Detail: | IGBT Trench Field Stop 600V 100A 360W Through Hole... |
DataSheet: | STGW50H60DF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 890µJ (on), 860µJ (off) |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 55ns |
Test Condition: | 400V, 50A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 62ns/178ns |
Gate Charge: | 217nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 360W |
Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 50A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 100A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Part Status: | Obsolete |
Packaging: | Tube |
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The STGW50H60DF belongs to the group of insulated gate bipolar transistors (IGBTs) developed by STMicroelectronics. It is an ideal choice for a wide range of applications where switching speed, low gate drive power, high efficiency and low switching losses are critical. This device is designed to drive a range of consumer, industrial and automotive applications as well as renewable energy systems and electrical appliance motor drives. It is an N-channel IGBT with a maximum continuous current rating of 50A and 600V blocking voltage.
The STGW50H60DF is suitable for various switching applications and is especially useful in high efficiency and low loss drives. The device has a small footprint and is designed to help reduce system costs and improve space utilization in power electronic systems. With its high frequency operation and low gate drive power, it is an ideal choice for industrial control, home appliances, motor control and other applications.
The STGW50H60DF is capable of switching at high frequency and has been tested up to a rating of 1MHz. It offers excellent dynamic performance as well as low gate drive power. Its turn-on and turn-off losses are lower than those of many other N-channel IGBTs, making it a very efficient switch. Overall, the STGW50H60DF is a very reliable, cost-effective device, ideal for a wide range of applications.
The STGW50H60DF works on the same basic principle as most IGBTs. It consists of an N-type collector and a P-type emitter, which are connected to a gate. When a positive voltage is applied to the gate, it attracts electrons from the N-type collector to the P-type emitter, creating a conduction path between the collector and the emitter. The current then flows through the device, enabling the transistor to switch on. When the gate voltage is removed, the electrons are no longer attracted to the P-type emitter and the conduction path is no longer available. Thus, the transistor is able to switch off. This basic principle is the same for all IGBTs.
The STGW50H60DF is a very useful device for a wide range of applications. Its combination of high frequency operation and low gate drive power makes it an excellent choice for those who need to switch a load efficiently and quickly. Its small footprint also makes it useful for applications that are space-constrained. Additionally, its low switching losses make it ideal for driving a variety of industrial, consumer, and automotive components. Overall, the STGW50H60DF is an excellent choice for those who need a fast, reliable, and efficient switch.
The specific data is subject to PDF, and the above content is for reference
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