STGW35NB60SD Allicdata Electronics
Allicdata Part #:

497-16202-5-ND

Manufacturer Part#:

STGW35NB60SD

Price: $ 4.05
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 70A 200W TO247
More Detail: IGBT 600V 70A 200W Through Hole TO-247-3
DataSheet: STGW35NB60SD datasheetSTGW35NB60SD Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.05000
10 +: $ 3.92850
100 +: $ 3.84750
1000 +: $ 3.76650
10000 +: $ 3.64500
Stock 1000Can Ship Immediately
$ 4.05
Specifications
Power - Max: 200W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 44ns
Test Condition: 480V, 20A, 100 Ohm, 15V
Td (on/off) @ 25°C: 92ns/1.1µs
Gate Charge: 83nC
Input Type: Standard
Switching Energy: 840µJ (on), 7.4mJ (off)
Series: PowerMESH™
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Current - Collector Pulsed (Icm): 250A
Current - Collector (Ic) (Max): 70A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The STGW35NB60SD is a single n-channel insulated gate bipolar transistor (IGBT). This type of IGBT is used in power applications and is capable of providing considerable power at a relatively low voltage. This device is often used in motor controls, vehicle traction, power converters, and welding tools.

The STGW35NB60SD is a low on-state resistance device and has high switching speed and low capacitance compared to other IGBTs. This makes it very efficient in high-power applications. Furthermore, its integrated protection features help reduce system costs by providing for reliable and safe operation. The STGW35NB60SD has positive temperature coefficient (PTC) current limiting protection, fast turn-off capabilities, optimized snubber circuit and over-voltage protection.

Typically, the STGW35NB60SD has a 900 V on-state voltage rating and an 800 V off-state voltage rating. This relatively low voltage rating makes this device suitable for a range of applications requiring high power and efficiency. In terms of current rating, the STGW35NB60SD can handle up to 40A continuous, and up to 75A peak.

In terms of working principles, the STGW35NB60SD utilizes a power bipolar transistor with an attached insulated gate field effect transistor (IGFET). This device has two terminals namely, the collector and the emitter. The collector is connected to the source of the power supply. The IGFET is connected to the gate, which can control the current flow through the collector and the emitter. By controlling the voltage applied to the gate, the current flow through the IGBT can be modified.

In order to control the IGBT, an external driver is required. This driver provides a signal to the gate allowing for the adjustment of the voltage applied to the gate. When power is supplied to the gate, the current will pass through the device, causing electrons to flow from the emitter to the collector. This electron flow creates a current, which can be used to power an application or system.

The STGW35NB60SD IGBT can provide reliable and efficient power in a range of applications. It is capable of handling a continuous current of 40A and is typically used in motor control and power converters, vehicle traction systems, and welding equipment. Furthermore, its PTC current limiting protection, fast turn-off and optimized snubber circuit make it a suitable choice for applications requiring reliable and safe operation.

The specific data is subject to PDF, and the above content is for reference

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