STGWA40H120DF2

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	160A
Vce(on) (Max) @ Vge, Ic:	2.6V @ 15V, 40A
Power - Max:	468W
Switching Energy:	1mJ (on), 1.32mJ (off)
Input Type:	Standard
Gate Charge:	158nC
Td (on/off) @ 25°C:	18ns/152ns
Test Condition:	600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr):	488ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3

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STGWA40H120DF2 is a state-of-the-art IGBT module developed by STMicroelectronics, a leading semiconductor firm based in Geneva, Switzerland. The STGWA40H120DF2 is suitable for multiple applications, including motor control, lighting, induction heating, welding, and other industrial and automotive applications.The STGWA40H120DF2 is a single IGBT module featured by a combination of outstanding current and energy performance, thermal reliability, and low switching losses. Its design improves power density, reduces system complexity, and provides cost savings. The module employs a compact design and standard 4-lead package that offers its users a thermally-reliable, environment-proof solution with wide operating temperature range from -40C to +155C.The working principle of the STGWA40H120DF2 is based on the same underlying principles of IGBT power switching devices, also known as Insulated Gate Bipolar Transistors (IGBTs). This type of transistor is suitable for high power applications as it combines the benefits of both metal–oxide–semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs). IGBTs are often used in switch-mode power supplies, motor control, lighting, telecom infrastructure, and other applications.Just like conventional MOSFETs and BJTs, IGBTs employ four leads consisting of a Drain, Gate, and Source, along with an Emitter lead (with BJTs).An IGBT has a P-channel MOSFET as the main switching element, while the Bipolar Junction Transistor emits a voltage to control the MOSFET’s gate. Unlike in BJTs, the IGBT current flow between the drain and source is controlled by the voltage applied to the gate, allowing for higher-frequency switching, low on-state voltage drop, low switching losses, and low conduction losses.The STGWA40H120DF2 features high current capability and is designed for low switching losses and low power consumption. It has current ratings up to 40A and a dielectric breakdown rating of 1200V.The module also features high surge current capability for noise-free switching and thermal shock prevention, allowing for more reliable operations.Its low saturation voltage and high-speed switching provide excellent overload protection and efficient power conversion.Overall, the STGWA40H120DF2 is suitable for a variety of motor control, lighting, induction heating, welding, and other industrial and automotive applications that require high switching speed and reliable performance. With its optimized thermal design, robust construction, and wide operating temperature range, STGWA40H120DF2 is an ideal choice for power conversion applications.

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