STGWT20H65FB Allicdata Electronics
Allicdata Part #:

497-15139-5-ND

Manufacturer Part#:

STGWT20H65FB

Price: $ 2.76
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 650V 40A 168W TO3P
More Detail: IGBT Trench Field Stop 650V 40A 168W Through Hole ...
DataSheet: STGWT20H65FB datasheetSTGWT20H65FB Datasheet/PDF
Quantity: 307
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.76000
10 +: $ 2.67720
100 +: $ 2.62200
1000 +: $ 2.56680
10000 +: $ 2.48400
Stock 307Can Ship Immediately
$ 2.76
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 40A
Current - Collector Pulsed (Icm): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Power - Max: 168W
Switching Energy: 77µJ (on), 170µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 30ns/139ns
Test Condition: 400V, 20A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Description

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The STGWT20H65FB IGBT is one of the most versatile and widely used transistors on the market. It is suitable for a wide range of applications, including power supplies, motor control, inverters, and lighting systems. This article will discuss the application field and working principle of the STGWT20H65FB IGBT.

The STGWT20H65FB IGBT is a fast, low-cost, high-efficiency transistor designed for high-performance applications. It offers a low on/off resistance and excellent switching characteristics. The device is also highly reliable, with its strong short-circuit and overcurrent protection capabilities. It is also capable of handling significant voltage and current spikes.

The STGWT20H65FB IGBT is suitable for use in a wide range of applications, including power supplies, motor control, inverters, and lighting systems. It is capable of operating at voltages ranging from 650V to 1200V, and at temperatures ranging from -55°C to+150°C. Its low on/off resistance and high switching frequency makes it an ideal choice for high-power applications.

The STGWT20H65FB IGBT works on the principle of a MOSFET and bipolar transistor combined. It consists of four main components: a drain, a gate, an emitter, and a collector. The drain and gate are used to control the current flow between the emitter and the collector. When a voltage is applied to the gate, a current is allowed to flow from the drain to the collector. When the voltage is removed from the gate, the current is blocked from the drain to the collector.

The STGWT20H65FB IGBT is a versatile and reliable transistor that can be used in a wide range of applications. Its fast switching speeds and low on/off resistance make it a great choice for high-power applications. Its strong short-circuit and overcurrent protection capabilities make it a safe choice for use in sensitive circuits.

In conclusion, the STGWT20H65FB IGBT is a reliable and versatile transistor that is suitable for a wide range of applications. Its fast switching speeds and low on/off resistance make it an ideal choice for high-power applications, while its strong short-circuit and overcurrent protection capabilities make it a safe choice for use in sensitive circuits.

The specific data is subject to PDF, and the above content is for reference

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