STGW80H65DFB-4

Introduction

STGW80H65DFB-4 is a single gallium-nitride (GaN)-based insulated gate bipolar transistor (IGBT) that is available in an all plastic D-Pak IGBT package. It is suitable for use in applications such as solar inverters, uninterruptible power supplies (UPS), and battery chargers. This device is ideal for use in applications which require lower power loss and higher current density.

Application Field

STGW80H65DFB-4 is suitable for use in a wide range of applications due to its low power loss and high current density. One area where this device can be particularly useful is in solar inverters. By using an IGBT such as STGW80H65DFB-4, solar inverters are able to produce higher output power with less input power. Solar inverters are used to convert direct current (DC) power, generated by solar cells, into alternating current (AC) power, which is then fed into the electric grid. The use of an IGBT in this application offers a reduced power loss and improved efficiency, making it an ideal choice for many solar applications.

STGW80H65DFB-4 can also be used in applications such as UPS and battery chargers. UPSs are used to provide steady, uninterrupted power supply to devices, such as computers and servers, which cannot support even momentary power interruptions. Battery chargers are used to charge various types of batteries, including lead-acid, nickel-cadmium, and lithium-ion. The use of an IGBT in these applications offers improved performance and higher efficiency.

Working Principle

The STGW80H65DFB-4 is an IGBT, which is composed of two separate elements: a Power MOSFET and a bipolar transistor. This combination makes the IGBT highly efficient in terms of power loss while delivering high current levels. The device can operate in both the linear and the saturated modes depending on the current and voltage levels.

The device operates by using voltage to control current flow. When a voltage is applied to the gate, a voltage drop is created which reduces the resistive channel between the drain and the source. This channel is known as the "switching channel" and it is used to control the amount of current flowing through the IGBT. When the voltage at the gate is reduced from its original value, the switching channel closes, which reduces the amount of current flowing through the device and causes it to enter the linear region.

Furthermore, when a certain gate voltage is exceeded, the device enters the saturated mode and the current flowing through it is limited to a maximum value. This effect is used to reduce power losses that may occur due to large current flow. This also improves the overall efficiency of the IGBT.

Conclusion

STGW80H65DFB-4 is an IGBT that is suitable for many applications due to its low power loss and high current density. It is particularly well-suited for use in solar inverters, UPS, and battery chargers. The working principle of the device is based on its ability to use voltage to control current flow, allowing it to enter either the linear or saturated mode depending on the voltage and current levels. This feature allows for improved efficiency, making the STGW80H65DFB-4 an ideal choice for many applications.