STGW80H65FB-4

Power - Max:	469W
Supplier Device Package:	TO-247-4L
Package / Case:	TO-247-4
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 80A, 10 Ohm, 15V
Td (on/off) @ 25°C:	84ns/280ns
Gate Charge:	414nC
Input Type:	Standard
Switching Energy:	2.1mJ (on), 1.5mJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 80A
Current - Collector Pulsed (Icm):	240A
Current - Collector (Ic) (Max):	120A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - IGBTs - Single

The STGW80H65FB-4 is part of a family of high voltage Insulated Gate Bipolar Transistors (IGBTs) that offers improvements over other types of power transistors. IGBTs are used in high power switching and inverting applications, for both AC and DC circuits. The STGW80H65FB-4 is well suited for power electronic applications, such as traction drives and solar inverters.An IGBT is a simple three-terminal device, consisting of a gate, emitter and collector. It is composed of two different materials, one of them being an Insulated Gate Field Effect Transistor (MOSFET). The MOSFET is made up of a pair of emitter and collector, and a gate dielectric layer between them. The second material is a bipolar junction transistor (BJT), and it consists of the same two active regions as the MOSFET, but it also contains two additional junctions between the base and emitter regions.When a voltage is applied to the IGBT gate, the gate is then able to turn on and complete a path between the emitter and collector. This allows current to flow through the device in the same manner as an ordinary transistor. The IGBT is able to handle high currents, and it has an incredibly high switching speed.The STGW80H65FB-4 is specifically tailored for high current applications, and it has improved features such as a high voltage tolerance, fast switching and strong protection against over-voltage, current and thermal conditions. This makes the device suitable for power electronics applications.In terms of working principle, the STGW80H65FB-4 is able to provide level shifting, low CTQ values and fast switching at high speed. The device also has a high tolerance level to withstand voltage spikes and turn-on overshoots.The STGW80H65FB-4 is a very reliable, efficient and powerful device. It has all the features and advantages of an IGBT, making it a perfect choice for applications ranging from solar inverters to power switching. Furthermore, its high voltage tolerance and strong protection against over-voltage, current and thermal conditions makes it extremely versatile and suitable for a range of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description