Allicdata Part #: | STGWA20M65DF2-ND |
Manufacturer Part#: |
STGWA20M65DF2 |
Price: | $ 1.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT TRENCH 650V 40A TO247 |
More Detail: | IGBT Trench Field Stop 650V 40A 166W Through Hole ... |
DataSheet: | STGWA20M65DF2 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
600 +: | $ 1.09809 |
Switching Energy: | 140µJ (on), 560µJ (off) |
Supplier Device Package: | TO-247 Long Leads |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 166ns |
Test Condition: | 400V, 20A, 12 Ohm, 15V |
Td (on/off) @ 25°C: | 26ns/108ns |
Gate Charge: | 63nC |
Input Type: | Standard |
Series: | M |
Power - Max: | 166W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Trench Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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The STGWA20M65DF2 is a single IGBT semiconductor device intended to be used in power electronic applications. This particular product is a 650V, 20A device capable of achieving a 30µs switching time and a 72mJ typical conducnting losses. The product is housed in an isolated base, making it ideal for a variety of high performance applications.
In terms of its application field, the STGWA20M65DF2 can be used in many popular applications for power electronics, such as motor control, solar cell inverters, UPS, high frequency welding, and motor drive motor. This semiconductor can also be used to convert AC to DC, regulate voltage and current, or interface with a microcontroller. The STGWA20M65DF2 can handle switching frequencies up to 10kHz and is suitable for use in harsh environments.
Regarding its working principle, the STGWA20M65DF2 is primarily composed of an N-channel MOSFET and a P-channel MOSFET, which are put together in the same chip. The N-channel is the main component of the IGBT, and its width is much larger than the width of the P-channel. When the IGBT is turned on, holes (electrons) will be injected into the N-channel, which will cause it to become conducting. This is the main switch that conducts the current through the gate. The P-channel acts as a control circuit, which can control the voltage and current flow in the circuit. If a voltage is applied to the gate, the P-channel will be enabled, and the IGBT will be turned on. When the gate voltage is removed, the P-channel will be disabled and the N-channel will be closed, shutting off the IGBT.
In conclusion, the STGWA20M65DF2 is an ultrafast IGBT device that can be used for a variety of power electronic applications. This device is a single component, meaning it is more compact and reliable than other devices. It can handle switching frequencies up to 10kHz, can convert AC to DC, regulate voltage and current, and interface directly with a microcontroller. Its working principle relies on the interaction of an N-channel and P-channel MOSFET, which control the current and voltage flow through the circuit.
The specific data is subject to PDF, and the above content is for reference
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