STGWA30H65DFB

Input Type:	Standard
Supplier Device Package:	TO-247 Long Leads
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	140ns
Test Condition:	400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	46ns/146ns
Gate Charge:	149nC
Series:	HB
Switching Energy:	382µJ (on), 293µJ (off)
Power - Max:	260W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 30A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Part Status:	Active

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Introduction to the STGWA30H65DFB

The STGWA30H65DFB is a single IGBT (Insulated Gate Bipolar Transistor) that is commonly used as a power switch in high-power/high current applications. This IGBT is available in both a TO-252 and I2PAK packages, each of which has different electrical characteristics. This article will discuss the application field and working principle of the STGWA30H65DFB.

Application Field of the STGWA30H65DFB

The STGWA30H65DFB is a high-power/high-current device, so it is commonly used in power switching applications. These applications can include motor drives, portable power, UPS systems, home appliances, lighting control and power supplies. The STGWA30H65DFB is also used in traction inverters, wind turbines, solar inverters, and fuel cell inverters.

Working Principle of the STGWA30H65DFB

The working principle of the STGWA30H65DFB is similar to other IGBTs. The STGWA30H65DFB consists of two MOSFETs that are connected in parallel with a common base. The MOSFETs create an internal voltage-controlled bipolar transistor. The transistor allows for both high-current and high-voltage operation, with lower power dissipation than a traditional MOSFET.When the base is biased, one of the two MOSFETs is switched on, and the current begins to flow through the device. The other MOSFET is switched off. The voltage at the base is regulated by the collector, and the current in the collector is regulated by the voltage at the base. This allows the STGWA30H65DFB to have high power and efficiency.

Conclusion

The STGWA30H65DFB is a single IGBT power switch that is used in a variety of high-power/high-current applications. The STGWA30H65DFB has a unique working principle, which is based on a voltage-controlled bipolar transistor created by two MOSFETs. The STGWA30H65DFB is highly efficient and offers high power, making it ideal for a variety of power switching applications.

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