STGWA50M65DF2 Allicdata Electronics
Allicdata Part #:

497-16973-ND

Manufacturer Part#:

STGWA50M65DF2

Price: $ 2.86
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRENCH GATE FIELD-STOP IGBT M SE
More Detail: IGBT Trench Field Stop 650V 80A 375W Through Hole ...
DataSheet: STGWA50M65DF2 datasheetSTGWA50M65DF2 Datasheet/PDF
Quantity: 767
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.59560
10 +: $ 2.33037
100 +: $ 1.90909
500 +: $ 1.62518
1000 +: $ 1.37063
Stock 767Can Ship Immediately
$ 2.86
Specifications
Series: M
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Power - Max: 375W
Switching Energy: 880µJ (on), 1.57mJ (off)
Input Type: Standard
Gate Charge: 150nC
Td (on/off) @ 25°C: 42ns/130ns
Test Condition: 400V, 50A, 6.8 Ohm, 15V
Reverse Recovery Time (trr): 162ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Description

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Transistors - IGBTs - Single

The STGWA50M65DF2 IGBT module is a high-performance and high-reliability IGBT module for industrial and energy applications. It is a reliable and robust power controller for frequency converters and welding machines. The STGWA50M65DF2 is a comprehensive solution that offers outstanding performance and low power loss performances.

Applications

The STGWA50M65DF2 is suitable for the following applications:

  • Power conversion: Frequency converters, solar inverters and traction motor drives
  • Welding: Medium to high-power MIG/MAG welding
  • Printing: Toner-based inkjet printing, electrophotographic printing
  • Power supply: Motor control, AC/DC power systems
  • Broad band: Switch-mode power supplies, point-of-load applications

Working Principle

The STGWA50M65DF2 is a modern, high-performance IGBT module based on a single-die IGBT chip. The IGBT chip uses a vertical channel construction and top-metal-contact technology. This design will help to minimize stray inductance and switching losses of the power module. It also provides a reliable, high breakdown voltage and low gate-charge characteristics.

The STGWA50M65DF2 employs a planar, SiC-insulated, gate-driven thyristor cells. When the IGBT gate drives it out of the on-state condition, the resulting reverse current flow produces an avalanche effect which removes the energy stored in the base semiconductor layer and electromechanical static charge. This provides rapid switching and improved noise immunity of the module.

The module utilizes a well-designed and optimized junction layout, IGBT chip technology, fabrication, and packaging to provide maximum drive capability and high immunity to extreme environmental conditions such as vibration, shock, and high temperatures. The module is designed to operate at a high temperature up to 125°C with a maximum junction temperature of 150°C.

Conclusion

The STGWA50M65DF2 is a reliable and efficient IGBT module designed for a wide range of industrial and energy applications. Its high-performance and low power loss make it an ideal power controller for frequency converters, solar inverters, and welding machines.

The specific data is subject to PDF, and the above content is for reference

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