STGWA60V60DF Allicdata Electronics
Allicdata Part #:

STGWA60V60DF-ND

Manufacturer Part#:

STGWA60V60DF

Price: $ 2.42
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT BIPO 600V 60A TO247-3
More Detail: IGBT Trench Field Stop 600V 80A 375W Through Hole ...
DataSheet: STGWA60V60DF datasheetSTGWA60V60DF Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 2.42000
10 +: $ 2.34740
100 +: $ 2.29900
1000 +: $ 2.25060
10000 +: $ 2.17800
Stock 1000Can Ship Immediately
$ 2.42
Specifications
Power - Max: 375W
Supplier Device Package: TO-247 Long Leads
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 74ns
Test Condition: 400V, 60A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 60ns/208ns
Gate Charge: 334nC
Input Type: Standard
Switching Energy: 750µJ (on), 550µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Current - Collector Pulsed (Icm): 240A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The STGWA60V60DF is a single IGBT transistor for electronic device manufacturers. It is manufactured by STMicroelectronics and is a robust, reliable, and powerful semiconductor device.

An IGBT is a three terminal semiconductor device that combines the benefits of both transistors and thyristors. It is a switching type device with very low on-state voltage drop, fast operation and low switching noise. IGBTs are commonly used in applications where high switching rates, low power losses and low EMI are required. The STGWA60V60DF is an extremely versatile device and can be used in a variety of applications, such as motor drives, solar inverters and UPS systems.

The STGWA60V60DF is a 600V/60A rated 650V/60A IGBT with a low gate charge. The device has a positive temperature coefficient, which helps to protect the transistor from thermal runaway. The device also has under voltage lockout (UVLO) and short circuit protection. The fast switching times of the STGWA60V60DF make it ideal for high frequency applications. The excellent power loss performance makes it perfect for high power applications.

The STGWA60V60DF has a fast switching time of 20ns, which is suitable for high frequency AC circuits. The low turn-on voltage of 2.0V and fast turn-on time of 50ns make the device ideal for switching applications. The turn-off voltage of 4V is also quite low, making the device suitable for high current applications.

The working principle of the STGWA60V60DF is based on the physical phenomenon of bipolar junction transistors (BJTs). BJTs are three-terminal devices that rely on the movement of holes and electrons across the junction to work. When a small electric current is passed through the control terminal (the gate), a larger electric current flows through the other two terminals (the source and the drain). This allows the STGWA60V60DF to switch current from the source to the drain.

The STGWA60V60DF is a high performance, reliable single IGBT transistor. It offers low gate charge, fast switching times, under voltage lockout and short circuit protection. It is suitable for a variety of applications, such as motor drives, solar inverters, UPS systems and others. The fast switching times and low gate charge make the device ideal for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference

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