STGWT40HP65FB

Power - Max:	283W
Supplier Device Package:	TO-3P
Package / Case:	TO-3P-3, SC-65-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	140ns
Test Condition:	400V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C:	-/142ns
Gate Charge:	210nC
Input Type:	Standard
Switching Energy:	363µJ (off)
Series:	HB
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 40A
Current - Collector Pulsed (Icm):	160A
Current - Collector (Ic) (Max):	80A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction:The STGWT40HP65FB is a single insulated gate bipolar transistor (IGBT) designed specifically for automotive applications. This device features soft recovery performance, which makes it suitable for use in a wide range of applications. This article will provide an overview of the STGWT40HP65FB’s application field and working principle.Application Field:The STGWT40HP65FB is mainly used for automotive powertrain applications such as electric vehicle inverters, electric vehicle motors, and ignition systems. The device is well suited for controlling high current in applications that require a high degree of precision and accuracy, such as electronic throttle systems. Because of its soft recovery performance, it is widely used for electric powertrain control.Features:The STGWT40HP65FB is a high efficiency IGBT featuring an insulated gate. Its maximum voltage rating of 650V enables it to deliver high power levels with a low switching losses. Its built-in flyback protection and integrated soft switching features reduce EMI emissions and improve system efficiency. It also features low device capacitance and ultra-low gate charge, making it highly suitable for applications requiring fast switching.Working Principle:As a bipolar transistor, the STGWT40HP65FB is made up of two junctions, known as emitter and collector. The emitter is connected to a voltage supply, while the collector is connected to a load. When the base current is increased, the transistor becomes activated and allows current to flow from the emitter to the collector and thus controlling the output voltage.The STGWT40HP65FB works by allowing current to flow through the two junctions. When a positive gate voltage is applied, it increases the width of the conducting channel between the collector and emitter region of the IGBT and thus controls the flow of current. Increasing the gate voltage will increase the conducting channel’s width and thus increase the amount of current flowing through it.Conclusion:The STGWT40HP65FB is a single insulated gate bipolar transistor (IGBT) designed for automotive applications. It is most commonly used for automotive powertrain applications, such as electric vehicle inverters, electric vehicle motors, and ignition systems. With its soft recovery performance and low gate charge, the device provides high current, high efficiency, and fast switching. When activated, the device works by allowing current to flow through the two junctions of the IGBT, increasing or decreasing the amount of current depending on the gate voltage applied.

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