STGWT40V60DLF

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Transistors - IGBTs - Single

STGWT40V60DLF Application Field and Working Principle

The STGWT40V60DLF is a special type of IGBT transistor conceived with the application in power electronics circuits in mind. IGBT transistors are different from the typical BJT transistors inherent to regular electronics, since they’re made with a combination of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and PNP bipolar junction transistor technologies. This particular component is particularly suitable for inverters and motor drives, due to its wide range of remarkable features, such as its 375 A current capacity and guaranteed voltage blocking.

The behavior of this IGBT transistor is governed by the same principles that rule all electric switches, regardless of the current or voltage structure. In summary, the component will shut off or turn on in response to a signal that either blocks or enables the current. In order to allow for the maximum amperage flow, it is important to this component that the triggering signal contains the right amount of electricity, otherwise the transistor won’t open completely.

The STGWT40V60DLF is a zero-voltage switching transistor, which means that there’s the chance to apply it without the need of an external snubber, even when the components have to handle an uncommonly high amperage. As soon as a signal turns on the transistor, the current starts flowing before the junction has the chance to reach the voltage at its gate.

Besides enabling a full conduction with minimum switching times, this transistor also allows for the implementation of a soft-switching technique. This particular approach consists on adding a filter capacitor at the gate circuit, in order to reduce the current through the transistor and minimize the energy dissipated.

Finally, this IGBT transistor also supports parallel connection between devices, something profoundly useful when extra current is needed. In order to achieve this, two components can be connected in parallel and their gates wired together. In this regard, this particularly powerful transistor can supply incredibly high currents. For example, if one of these components is capable of conducting 750 A, two of them connected in parallel can manage up to 1500 A.

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