
Allicdata Part #: | 497-14234-5-ND |
Manufacturer Part#: |
STGWT80H65DFB |
Price: | $ 4.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT 650V 120A 469W TO3P-3L |
More Detail: | IGBT Trench Field Stop 650V 120A 469W Through Hole... |
DataSheet: | ![]() |
Quantity: | 68 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.72500 |
10 +: | $ 4.58325 |
100 +: | $ 4.48875 |
1000 +: | $ 4.39425 |
10000 +: | $ 4.25250 |
Power - Max: | 469W |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 85ns |
Test Condition: | 400V, 80A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 84ns/280ns |
Gate Charge: | 414nC |
Input Type: | Standard |
Switching Energy: | 2.1mJ (on), 1.5mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 80A |
Current - Collector Pulsed (Icm): | 240A |
Current - Collector (Ic) (Max): | 120A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STGWT80H65DFB belongs to a class of transistors called IGBTs, which stands for insulated-gate bipolar transistors. This particular IGBT is a single type, meaning that it is a single switch that can be used to control electrical flow to a circuit. It is designed to be both highly reliable and efficient, allowing it to be used in a wide variety of applications.The STGWT80H65DFB has an excellent ability to handle high currents, making it ideal for applications requiring powerful switching. It is commonly used in motor control circuits, allowing engineers to control the speed of motors with greater accuracy and efficiency. Additionally, the device is also used in circuits requiring steady power output, since it has excellent thermal stability.When it comes to how the STGWT80H65DFB works, it is based on a principle of gate conduction. The device consists of two parts: the IGBT (insulated gate) and the bipolar transistor. The IGBT is responsible for conducting the gate current to the bipolar transistor, which then allows current to flow through the circuit. This is done by controlling the voltage of the base of the bipolar transistor, which in turn controls the flow of the current through the transistor.The STGWT80H65DFB is designed with a low-voltage potential, which allows the device to be used in low-power applications. This makes it ideal for applications that require very low power consumption, such as LED lighting systems. Additionally, the device is designed with an extremely low level of noise, making it suitable for applications that require minimal disruption when being switched.Overall, the STGWT80H65DFB is an excellent choice for a wide range of applications. Its low voltage potential and low noise levels make it ideal for low power applications such as LED lighting systems. Additionally, its ability to handle high currents makes it suitable for powerful switching applications. As a result, it is an ideal device for motor control circuits and other systems that require reliable and efficient power control.
The specific data is subject to PDF, and the above content is for reference
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