STGWT80V60DF

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	120A
Current - Collector Pulsed (Icm):	240A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 80A
Power - Max:	469W
Switching Energy:	1.8mJ (on), 1mJ (off)
Input Type:	Standard
Gate Charge:	448nC
Td (on/off) @ 25°C:	60ns/220ns
Test Condition:	400V, 80A, 5 Ohm, 15V
Reverse Recovery Time (trr):	60ns
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

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STGWT80V60DF is a single high voltage Insulated Gate Bipolar Transistor (IGBT) designed for use in switching applications. It is specifically designed for use in low EMI (electromagnetic interference) applications, and offers excellent low turn-on and turn-off characteristics.The STGWT80V60DF is an insulated gate bipolar transistor (IGBT) with a wide variety of applications and uses. It is most often used in various control circuits, such as motor drives, AC motor speed controllers, brushless motor controllers, and switching power supplies. This device also finds use in industrial automation systems, where precise control is needed. In addition, the STGWT80V60DF is also used in circuits for controlling and regulating lighting intensity, as well as for controlling voltage and current.The STGWT80V60DF is a wide-band Insulated Gate Bipolar Transistor (IGBT) which has exceptional characteristics, such as a low on-state voltage and a low-inductance blocking capability. This makes it an ideal choice for applications requiring a low-voltage and low-inductance IGBT. Additionally, the STGWT80V60DF is also ideal for high frequency switching applications, given its wide-band operation.The STGWT80V60DF works by the use of two bi-directional switching elements: an n-channel vertical insulated gate field effect transistor (VIGFET), and a p-channel vertical insulated gate bipolar transistor (VIGBT). The VIGFET is used as the main switching element, which is driven by an external voltage source. The VIGBT is used as an auxiliary switch, used for higher-speed switching and for protecting the IGBT from excessive currents.In order to achieve the aforementioned functionality, the IGBTs used in the STGWT80V60DF require two independent gate signals. One gate signal is applied to the VIGFET, while the other is applied to the VIGBT. This is done using two terminal gate pulse signals (TGP) which are formed from these gate signals. By taking these two signals and combining them, the resulting output signal is used to control the states of both IGBTs simultaneously.The STGWT80V60DF also offers excellent thermal performance, due to its low base resistance and a fast turn-on time. Additionally, the STGWT80V60DF has a wide safe operating-area (SOA) and high surge ratings, making it a highly reliable component.Overall, the STGWT80V60DF is a high-performance IGBT ideal for a wide range of applications. Its low EMI characteristics, low turn-on and turn-off characteristics, and excellent thermal performance make it an excellent choice for applications requiring precise control. Additionally, its wide safe operating area and high surge ratings make it an ideal component for high frequency switching applications.

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