STL33N60DM2 Discrete Semiconductor Products |
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Allicdata Part #: | 497-16941-2-ND |
Manufacturer Part#: |
STL33N60DM2 |
Price: | $ 2.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 600 V, 0.115 OHM TYP., |
More Detail: | N-Channel 600V 21A (Tc) 150W (Tc) Surface Mount Po... |
DataSheet: | STL33N60DM2 Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 1.98017 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1870pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | MDmesh™ DM2 |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 10.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STM33N60DM2 is an N-channel insulated gate field effect transistor (FET) used in power control and switching applications. As an integrated circuit (IC) device, the STM33N60DM2 offers many advantages over discrete FETs and is one of the most widely used power transistors. It is designed to be able to switch voltages quickly and reliably, and has a variety of applications in the field of power electronics and motor control.
The STM33N60DM2 is a single-channel, 30V N-channel insulated gate field effect transistor. The device contains two clearly defined drain and source elements and a gate terminal, or gate electrode, which is insulated from the other two terminals by a gate oxide layer. When a current is applied between the gate and source electrodes, a voltage appears between the drain and source electrodes. This voltage is referred to as the drain-source voltage and is used to control the conduction of the device.
In order to switch power efficiently with the STM33N60DM2, it is necessary to accurately control the drain-source voltage. To achieve this, the device features a number of features such as a low gate threshold voltage, a low on-state resistance, and a low gate-source capacitance. The low gate-threshold voltage means that the minimum applied gate-source voltage at which the device will start to conduct current is reduced. This enables the device to switch at higher frequencies and operate in higher-power applications.
The low on-state resistance of the STM33N60DM2 ensures that the maximum current is allowed to flow through it when switched on. The low gate-source capacitance ensures that the gate-source voltage is accurately controlled. The combination of these two features in the STM33N60DM2 allows it to operate in high speed switching applications, making it suitable for use in power electronics and motor control.
The STM33N60DM2 is a versatile device and is used in a wide range of applications. It is commonly used in motor control applications, such as the control of speed and torque in electric motors, inverters and servo motors. It is also widely used in power electronics and power converters, such as AC-DC and DC-DC converters, and in power switching circuits. The device can also be used in power conditioning and power conversion, in audio amplification circuits, and in signal conditioning circuits.
In summary, the STM33N60DM2 is a powerful, single-channel, 30V N-channel insulated gate field effect transistor. It is designed to be able to switch power quickly and efficiently, and is suitable for use in a variety of applications, from motor control and power electronics to audio amplification and signal conditioning.
The specific data is subject to PDF, and the above content is for reference
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