
Allicdata Part #: | 497-14969-2-ND |
Manufacturer Part#: |
STL33N60M2 |
Price: | $ 1.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 21.5A PWRFLAT88 |
More Detail: | N-Channel 600V 22A (Tc) 190W (Tc) Surface Mount Po... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 1.96000 |
10 +: | $ 1.90120 |
100 +: | $ 1.86200 |
1000 +: | $ 1.82280 |
10000 +: | $ 1.76400 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 10.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL33N60M2 is a field effect transistor (FET) that is widely used in high performance switching and analog applications including power management applications. This versatile FET device is part of a larger family of FETs manufactured by Texas Instruments.
The STL33N60M2 is a single N-channel tight geometry power MOSFET. It is capable of operating with a wide range of voltages, from -20V to 600V, and a wide range of switching speeds from 100MHz to 1GHz. It has a high temperature operating range and low on-resistance, making it an ideal choice for high power applications. Its tight geometry design enables it to withstand high voltage and high power levels without compromising performance and reliability.
The STL33N60M2 is suited for a wide range of applications in the industrial, automotive, consumer and medical sectors. It is commonly used in high frequency switching and DC-DC converter applications, as well as power distribution, lighting and motor control. In particular, it is suitable for medium and high voltage switching, such as in medium and high power supplies, high power industrial motor control and power converters, and pulse power applications.
The STL33N60M2 offers a range of advantages over traditional power MOSFETs, such as reduced cost and improved performance. Its tight geometry design offers a higher voltage rating and improved switching speeds, as well as improved electrical noise suppression. In addition, it is low in overall power dissipation, and is RoHS compliant for improved environmental protection.
The STL33N60M2 operates on the principle of electrical conduction in a semiconductor material. It functions as an electronically controlled current switch and is activated by a switchable gate voltage. When the gate voltage is low, no current can flow between the source and drain and the FET is off. If the gate voltage is increased, electrons in the source-drain channel will be attracted to the gate, resulting in a high level of current flow between the source and drain and the FET is on.
The STL33N60M2 is an exceptional device that combines reliable switching performance with excellent power efficiency. Its tight geometry design allows it to operate at higher voltages and frequencies, and its low on-resistance enables the device to handle higher power levels. Its RoHS compliance ensures minimal environmental impact, and its high temperature operation ensures reliable performance for high power applications. The STL33N60M2 is ideal for a wide range of switching and power management applications.
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