STL3NM60N

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The STL3NM60N is a n-channel enhancement-mode power field effect transistor (FET) produced by STMicroelectronics. It is specifically designed for applications in power management, boosting, and voltage regulation and offers superior performance thanks to its low gate charge and low on-resistance.

The STL3NM60N is housed in a compact TO-220 package, making it relatively easy to mount even in more congested electronic assemblies. It is rated for an operating temperature range of -55 to 150 °C and also features an operational junction temperature range of 175 °C, allowing it to be used in a wide variety of applications. The device also meets or exceeds the requirements of the standard IEC/EN 60747-5-2.

The STL3NM60N is a unipolar device, meaning it is made up of one type of semiconductor material, in this case n-type silicon. It is an enhancement-mode FET, which means it is normally off and is turned on by current that flows into the gate terminal. This makes it different from a depletion-mode FET, which normally conducts and needs an external voltage to turn it off.

The STL3NM60N is ideal for use in switch-mode power supplies, DC-DC converters, and motor control due to its low drain-to-source on-resistance of 0.045 Ω and its relatively low gate charge of 3.8 nC. It is also rated for an avalanche current of 75 A, making it an ideal choice for applications that require a high current gain with low switching losses.

The STL3NM60N is a single FET and can be used in both single and dual configurations. In the dual configuration, two FETs can be connected in series to double the current gain, allowing for greater power handling capabilities. In single configurations, one FET can be used to reduce switching losses due to the lower drain-source on-resistance compared to higher current FETs.

The STL3NM60N\'s working principle is easy to understand. It is a voltage-controlled device, meaning that when a voltage is applied to its gate terminal, the drain-source channel is opened and current can flow from the drain to the source. The greater the voltage applied, the higher the current that can flow through the drain-source channel. By adjusting the gate voltage, the current gained through the drain-source channel can be controlled for a variety of applications.

In summary, the STL3NM60N is an enhancement-mode n-channel FET used for a variety of power management, voltage regulation, and motor control applications. It has a low gate charge and low drain-source on-resistance, making it ideal for use in switch-mode power supplies and other current handling applications. It can be used either in single or dual configurations depending upon the needs of the application. Its working principle is based on a voltage-controlled gate, allowing current to flow through the drain-source channel when a voltage is applied to the gate terminal.

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