Allicdata Part #: | STL35N75LF3-ND |
Manufacturer Part#: |
STL35N75LF3 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET |
More Detail: | N-Channel 75V 32A (Tc) 50W (Tc) Surface Mount Powe... |
DataSheet: | STL35N75LF3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.26053 |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 50V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 32A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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STL35N75LF3 is a type of n-channel insulated gate field effect transistor (IGFET) product manufactured by STMicroelectronics. It is available in a standard TO-220 package and includes a SuperSOT-6 lead frame. It is also known as an enhancement mode MOSFET that uses a Gate to Source structure.
Application Field of STL35N75LF3
The STL35N75LF3 device is typically used in motor control applications, such as motor drives, power inverters, digital controllers, and programmable logic controllers. It is also often used in applications requiring optical isolation, such as in industrial networks, medical imaging, and automotive brake systems. It works well as a switch and amplifier, and can also be used in motor speed controllers, and high voltage amplifiers.
Working Principle of STL35N75LF3
STL35N75LF3 is an insulated gate field effect transistor (IGFET). It is built to work on a Gate to Source structure, or in other words, it utilizes a Gate-controlled switch, controlled by voltage or current. When a positive voltage is applied to the Gate terminal through a drive circuit, the MOSFET starts conducting and a linear region is created that is based on the amount of current that is being applied.
The device also utilizes a process called ‘punch-through’, which is the process of current flowing through the channel and the PN junction in the device, allowing for faster switching and better control of electrical current. The addition of the Gate-controlled switch also creates a voltage-based field effect, which helps regulate current, control resistance, and create a high efficiency of the STL35N75LF3 device.
The device also includes built-in protection from electro-static discharge (ESD) and overvoltage protection. It has built-in dual-gate protection circuits, which helps reduce accidental over-voltage spikes in the circuit, and which can provide protection against any sensitive areas of the circuit.
In addition to these features, the device also features low on-resistance and low gate charge, which makes it an ideal choice for high-current and high-power applications. It has an increased operating temperature range up to 150°C, while still maintaining an efficiency of 95%.
Conclusion
The STL35N75LF3 is an N-channel MOSFET that is designed to be used in motor control, optical isolation, and power inverter applications. It has low on-resistance and low gate charge capabilities, which makes it ideal for high-current and high-power applications. The device also has built-in ESD and overvoltage protection, as well as a process called ‘punch-through’, which allows for faster switching and better control. All in all, the STL35N75LF3 is a reliable and efficient device for many industrial applications.
The specific data is subject to PDF, and the above content is for reference
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