STL33N65M2 Discrete Semiconductor Products |
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Allicdata Part #: | 497-16939-2-ND |
Manufacturer Part#: |
STL33N65M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | N-CHANNEL 650 V, 0.124 OHM TYP., |
More Detail: | N-Channel 650V 20A (Tc) 150W (Tc) Surface Mount Po... |
DataSheet: | STL33N65M2 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1790pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 41.5nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 154 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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STL33N65M2 is an advanced N-Channel MOSFET transistors which have been designed specifically for enhanced precision and high-temperature operation. It has come to dominate the market for high-voltage, mobile power switches and other power device applications. These transistors have very low junction capacitance, which makes them ideal for use in high speed systems. The device also features a very low on-resistance and a wide range of gate-drain impedance.
STL33N65M2 transistors are capable of regulating current flow under various environmental conditions. They act as efficient power switches, efficiently turning off or on electrical current. By controlling the flow of electrons through its gate, the STL33N65M2 can effectively regulate power to the application it is being used in. Features such as this make these devices ideal for various digital systems.
One application field of the STL33N65M2 transistors is in the automotive industry. This type of transistor is able to provide regulated power to electric systems, making them an ideal choice for cars which use a digital control system. By controlling the voltage, current and other parameters in the system, proper operation of the electric systems can be ensured.
In addition to automotive applications, STL33N65M2 transistors can also be used in computer hardware and other digital systems. By utilizing the low-power loss and low on-resistance capabilities of these transistors, their performance is improved. This enables faster and more accurate power delivery to the components of the system, resulting in better system performance.
The working principle of the STL33N65M2 transistors is based on its N-Channel structure. This type of structure is commonly used in transistors of this type and is known as an insulated-gate FET, or IGFETs. The N-Channel structure allows the transistor to control the flow of electrons through its gate. When a negative voltage is provided to the gate, the source and drain terminals of the transistor are connected which then generates the desired current. The current can be controlled by adjusting the voltage provided to the gate.
The use of a N-Channel structure also enables the STL33N65M2 transistors to be used in various digital systems. These transistors are suitable for use in computing environments as they are capable of providing instant information to components such as memory, processors and other high-speed components. This provides better system performance and improved latency.
The STL33N65M2 transistors have become popular due to their robust construction and reliable performance. Their high-temperature operation makes them a good choice for high-voltage applications. The wide variety of gate-drain impedance and the low on-resistance capabilities also make these transistors well suited for power switching applications.
In summary, the STL33N65M2 transistors are a reliable and high-performance device capable of providing precision control of current and voltage in various digital systems. They use a N-Channel structure in order to switch and regulate current, while their low junction capacitance makes them suitable for use in high-speed digital applications. With their low on-resistance and wide range of gate-drain impedance, these devices are an ideal choice for applications where power switching and efficient power supply is needed.
The specific data is subject to PDF, and the above content is for reference
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