STL35N15F3

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STL35N15F3 is a N-channel MOSFET (metal oxide semiconductor field effect transistor) that offers advanced high-speed switching performance with superior saturated drain current and avalanche energy performance. The transistor offers high dv/dt capability, thermal shutdown, low gate charge, and fast switching time for increased efficiency when used for various high-power applications. It is especially useful for high frequency applications like high speed switching, switching power supplies, and motor control.

At its core, the MOSFET is a three-terminal switching electronic component. An electric field controls the operation of the component, which serves as a key component in various electronic circuits. This makes the MOSFETs a great choice for switching, amplification, and power control. It is also the component of choice for the job of controlling large amounts of current over a wide voltage range.

The STL35N15F3 is rated at 15V and 35A. The transistor has a maximum drain-source voltage of ± 20V and a maximum gate-source voltage of ± 20V as well. It has an RDS on of 0.2mΩ and an input capacitance of 93pF. With a gate drain resistor, it has a maximum gate charge of 8.7nC at 2.5V.

The circuit of a typical MOSFET is relatively straightforward. It consists of three terminals: gate, drain, and source. The gate is used to control the voltage between the drain and source terminals. By applying a positive voltage to the gate, it attracts electrons to the gate, creating a conductive channel between the drain and source. This allows current to flow from the drain to the source.

The gate-source voltage of the MOSFET is an important factor in determining its performance. The higher the gate-source voltage, the lower the resistance of the canal between the source and drain, as increased voltage is necessary to "open" the channel and allow current to flow. As the voltage across the gate and source increases, the MOSFET starts to conduct more current and reach its maximum current rating. This is why the gate-source voltage (VGS) is an important parameter for the selection of MOSFET since it determines the conductivity of the transistor.

The ability of the MOSFET to rapidly switch between on and off states is one of the primary factors when considering applications for these devices. This is especially important for switching power supplies and motor control. In both cases, the power must be switched quickly and accurately to ensure the proper operation of the device. This is why the STL35N15F3 MOSFET is suitable for these applications due to its fast switching time, low gate charge, and high dv/dt capability.

The STL35N15F3 MOSFET is suitable for a multitude of applications involving high power switching and low voltage circuits. It is particularly suitable for motor control, switching power supplies, high-frequency inverters, and battery chargers, amongst other purposes. This is made possible by its ability to rapidly switch between on and off states, and its high peak output current capabilities. Furthermore, the MOSFET offers good thermal properties, low gate charge, and a high dv/dt capability for increased efficiency.

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