Allicdata Part #: | 497-13601-2-ND |
Manufacturer Part#: |
STL36N55M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 550V 22.5A 4PWRFLAT |
More Detail: | N-Channel 550V 22.5A (Tc) 2.8W (Ta), 150W (Tc) Sur... |
DataSheet: | STL36N55M5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (8x8) HV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2.8W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2670pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 16.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22.5A (Tc) |
Drain to Source Voltage (Vdss): | 550V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STL36N55M5 is a state-of-the-art N-Channel MOSFET designed for applications requiring low gate charge, high speed power switching, and low on-resistance.
An N-channel MOSFET is a drive to control the power being sent to a load. It has four terminals, gate, source, drain and body. The gate is where the electrical signal is applied to control the flow of power to the device. The source is the connection between the gate and the body. The drain is the connection between the device and the power supply, and the body is the connection between the device and the environment.
The primary application of the STL36N55M5 is power switching in automotive and consumer applications; where it has been engineered to meet specific demands. It provides high current capability and low on-resistance while requiring a low gate charge. It is extremely fast, with a maximum switching time of 10ns, allowing it to handle up to 10A of load current.
The STL36N55M5 features a low gate threshold voltage, making it an ideal choice for digital circuit applications. The low gate voltage also reduces switching losses, allowing the device to operate more efficiently. In addition, the device supports a maximum peak current rating of 50A and reverse avalanche energy rating of 2.5J at 25°C.
The working principle of the STL36N55M5 is based on the principle of metal-oxide-semiconductor field-effect transistors (MOSFETs). A MOSFET is an electronic switching device controlled by a voltage applied to the gate electrode, allowing the flow of current through the channel region of the MOSFET. The drain-to-source current flow is directly proportional to the gate voltage, allowing precise control of the current.
MOSFETs are divided into two types: Enhancement and Depletion. The STL36N55M5 is an Enhancement type device, meaning the current only flows if a certain threshold voltage (VGS) is reached. If the applied gate voltage in below the threshold voltage, then the device remains off, blocking current flow. In addition, the device can be made to switch off as soon as the gate voltage drops below the threshold voltage, making it ideal for digital circuit applications.
The STL36N55M5 is a high performance device, capable of providing precise, reliable, and dynamic control of currents up to 10A. It is designed to handle extreme conditions, meeting a maximum junction temperature of 175°C and a voltage rating of 500V. With its low on-resistance, low gate charge requirements and extreme switching speeds, the STL36N55M5 is the perfect choice for automotive, consumer, and digital applications.
The specific data is subject to PDF, and the above content is for reference
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