TIP102-BP Allicdata Electronics
Allicdata Part #:

TIP102-BP-ND

Manufacturer Part#:

TIP102-BP

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN DARL 100V 8A TO-220
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A ...
DataSheet: TIP102-BP datasheetTIP102-BP Datasheet/PDF
Quantity: 82
1 +: $ 0.81270
10 +: $ 0.71757
25 +: $ 0.64840
100 +: $ 0.56725
250 +: $ 0.49778
500 +: $ 0.43990
1000 +: $ 0.34729
3000 +: $ 0.32414
5000 +: $ 0.30870
Stock 82Can Ship Immediately
$ 0.9
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 80W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Part Number: TIP10*
Description

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The TIP102-BP application field and working principle are very important in the area of ​​electronics. It is a bipolar transistortype that is designed to handle medium-power applications such as power amplifiers and switching circuits. These transistors have a very high breakdown voltage of up to 200 volts, making them ideal for higher power applications. The TIP102-BP is composed of three p-n-p type ICs. The ICs have three terminals: collector, base and emitter. They have very good high-frequency response and low RDS(on) values. The most important feature of TIP102-BP is its high power dissipation, which is up to 100 watts.

The working principle of TIP102-BP is based on a junction transistor. A transistor has three layers, namely the base, collector, and emitter. The base is the layer between the collector and emitter. Depending on the type of transistor, the layers may be either n-type or p-type. In the case of the TIP102-BP, the layers are made of p-type material. The base, collector, and emitter are all p-type layers. The collector, emitter, and base act as the input, output, and control terminals respectively.

The single transistors used in the TIP102-BP can be used in either a common emitter or a common base circuit configuration. In the common emitter configuration, the collector is connected to the source and the base is connected to the load. The current flow from the collector to the base is controlled by the base-emitter voltage difference. In the common base configuration, the base is connected to the source and the collector is connected to the load. The current flow from the base to the collector is controlled by the base-emitter voltage difference. In both configurations, the higher the voltage difference, the higher the current flowing through the transistor.

The TIP102-BP is mainly used in linear power amplifier circuits. It can also be used as a switch in switching circuits. It is a very efficient transistor for handling power since it has very low RDS(on) values and a high power dissipation rating of up to 100 watts. The TIP102-BP can also be used in high-frequency circuits due to its high-frequency response. It is an ideal transistor for power applications due to its high breakdown voltage and its relatively low cost.

In conclusion, the TIP102-BP is a very versatile transistor that can be used in a variety of applications. Its three p-n-p type ICs are designed to handle medium-power applications such as power amplifiers and switching circuits. It can also be used in linear power amplifier circuits, switching circuits, and high-frequency circuits. The TIP102-BP is an ideal transistor for power applications due to its high breakdown voltage and its relatively low cost.

The specific data is subject to PDF, and the above content is for reference

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