TIP135 Discrete Semiconductor Products

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Introduction

Before going further into the application field and working principle of TIP135, it is necessary to clearly understand what Transistors - Bipolar (BJT) - Single are. BJT are one of the most popular types of transistors in modern electronics, which are widely used for amplification and switching of electrical signals. BJTs work either in a current amplification which normally applies to analog electronics, or as a switch which apply to digital. This article focuses on one of the famous BJTs, TIP135.

TIP135 Overview

TIP135 is an NPN type bipolar junction transistor (BJT) with a voltage rating of 30V and a maximum power rating of 4W. It belongs to the single-package family of BJTs and is commonly used in linear analogue circuits and sometimes as a switch. This handy transistor is manufactured by one of the most reputable semiconductor companies, ST Microelectronics.

TIP135 Application Field

TIP135 is widely applicable to many fields due to its wide range of characteristics. It is commonly used in small signal amplifiers and drivers due to its nice linear amplification characteristics. For example, when TIP135 is used to drive the inputs of FETs and bipolar devices, its small signal current gain generally ranges from 500 to 600. Its fast switching speed also makes it suitable for digital electronics. In terms of audio applications, this BJT is often used in pre-amplifiers, headphone amplifiers, tone and equaliser controls, and many other sound applications. Additionally, it is applicable for various other applications such as low voltage power supplies, modulation and demodulation, and more.

TIP135 Working Principle

BSW8TIP135 operates under the principle of bipolar junction. It consists of two layers of P- and N-type semiconductor materials sandwitched together. It is the NPN type BJT, which means it has two N-type layers with a P-type layer in the middle. When a voltage is applied to the P- layer between the two N-type layers, the electron tunnel through the narrow P-N junction and create a ‘P-N depletion’ layer to flatten the potential barrier. Thus, a P-N junction is formed. When this junction is connected to the base of the BJT, the current flows from the negative terminal of the battery, through the PNP junction (base-emitter junction), and into the positive terminal of the battery, allowing electrons from the base to enter the N-type part of the transistor. This will allow current to flow from the emitter to the collector and N-type junction (collector-base junction), and the current gain of the BJT can be modulated by varying the voltage applied to the base terminal.

Conclusion

In conclusion, the application field and working principle of TIP135 has been discussed. It is a NPN type bipolar junction transistor with a wide range of characteristics suitable for many applications, such as linear analog circuits and digital electronics, audio applications, low voltage power supplies, modulation and demodulation, etc. It operates under the principle of bipolar junction and the current and voltage can be modulated from the base terminal thus allowing the transistor to be used as an amplifier or a switch.

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