TIP110-BP Allicdata Electronics
Allicdata Part #:

TIP110-BP-ND

Manufacturer Part#:

TIP110-BP

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN DARL 60V 2A TO-220AB
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 2A ...
DataSheet: TIP110-BP datasheetTIP110-BP Datasheet/PDF
Quantity: 755
1 +: $ 0.81270
10 +: $ 0.71757
25 +: $ 0.64840
100 +: $ 0.56725
250 +: $ 0.49778
500 +: $ 0.43990
1000 +: $ 0.34729
3000 +: $ 0.32414
5000 +: $ 0.30870
Stock 755Can Ship Immediately
$ 0.9
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 50W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: TIP110
Description

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TIP110-BP Application Field and Working Principle

The TIP110-BP is a silicon, NPN, Darlington power transistor that is used in various fields. It is mainly used for general-purpose switching and amplifier applications. It is an ideal choice for amplifying high-current and high-voltage signals.

The TIP110-BP features an epitaxial construction with a power dissipation of 220W (Tc = 25°C). It has a collector-emitter breakdown voltage of 200V and a collector-base breakdown voltage of 300V. The device is designed with a high collector-emitter saturation voltage of 500 mV, making it ideal for use in amplifier applications.

The device is designed with a low saturation voltage, allowing it to switch low-resistive loads. It has an operating temperature range of -55°C to +150°C, making it suitable for various applications. This transistor also features an excellent high-frequency response, making it especially suitable for audio amplifiers.

The TIP110-BP has an integrated base-emitter resistor, which reduces the switching time and improves the device’s current gain. It also has a high current rating and low thermal resistance, making it suitable for various switching applications.

The working principle of the TIP110-BP is the same as all other bipolar transistors. When the base voltage is applied, it allows current to flow from the collector to the emitter. As the base voltage increases, the amount of current flowing through the transistor increases. This allows the current to be amplified.

The TIP110-BP also features an integrated protection diode, which helps to protect the device from accidental reverse connections. The diode has a voltage rating of 50V and a forward current of 20mA. This makes the transistor suitable for use in a variety of applications where reverse currents may occur.

In summary, the TIP110-BP is a silicon NPN Darlington power transistor that is used in many different applications. It has excellent current gain, low saturation voltage, and high-frequency response. It also has an integrated protection diode that helps protect the device from accidental reverse connections. The TIP110-BP is an ideal choice for general-purpose switching and amplifier applications.

The specific data is subject to PDF, and the above content is for reference

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