TIP115G Allicdata Electronics
Allicdata Part #:

TIP115GOS-ND

Manufacturer Part#:

TIP115G

Price: $ 0.50
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 60V 2A TO220AB
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 2A ...
DataSheet: TIP115G datasheetTIP115G Datasheet/PDF
Quantity: 749
1 +: $ 0.45990
10 +: $ 0.40446
100 +: $ 0.30996
500 +: $ 0.24502
1000 +: $ 0.19602
Stock 749Can Ship Immediately
$ 0.5
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: TIP11*
Description

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Transistors - Bipolar (BJT) - Single

TIP115G is a type of NPN complementary bipolar transistor with diverse application fields and working principle. As a type of NPN bipolar transistor, it is a three-terminal device consisting of an emitter, base and collector. The device comes in a plastic TO-220AB package, with an extended controller and an integrated electro-static protection diode, to ensure good performance in different electrical supply conditions over a wide range of temperatures.

The TIP115G transistor is manufactured for PNP complements such as TIP125G, for improved system performance. This type of transistors is ideal for a wide range of applications including those requiring high-current switching and amplification such as power regulation, motor control, analog electronics, and radio frequency amplification.

TIP115G working principle is based on the various electrical responses that it produces. The base-emitter junction has two diodes, one of which is forward biased and the other is reverse biased. The forward biased diode conducts electric current from the base to the emitter resulting in the production of electron-hole pairs in the base region. As these electrons move towards the collector region, the base-collector junction becomes forward biased and the electrons continue to move towards the collector. The voltage applied to the collector then determines the flow of electrons that are released into the collector region.

TIP115G has numerous advantages that make it ideal for various applications. These include low power consumption levels due to the reduced saturation voltage. It also contains a low voltage drop across the base-emitter junction since the diode current-gain factor is low. The device also offers high transistor gain due to its built-in bootstrap circuit used to improve the stability.

TIP115G has a wide range of applications which include motor control, PWM controllers, automotive control systems, H-Bridge circuits, analog switching and voltage regulators. It is also known to be used in switch mode power supplies, amplifier circuits, and DC-to-DC converters. Furthermore, it can be used in high frequency stages that require amplification of small signals.

In summary, the TIP115G is a type of NPN complimentary Bipolar Transistor that exhibits excellent electrical characteristics and performance over a wide temperature range. It comes with a wide range of applications, including motor control, power regulators and signal amplification, making it ideal for demanding applications.

The specific data is subject to PDF, and the above content is for reference

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