TIP111G Allicdata Electronics
Allicdata Part #:

TIP111GOS-ND

Manufacturer Part#:

TIP111G

Price: $ 0.47
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 80V 2A TO-220AB
More Detail: Bipolar (BJT) Transistor NPN - Darlington 80V 2A ...
DataSheet: TIP111G datasheetTIP111G Datasheet/PDF
Quantity: 1947
1 +: $ 0.42210
10 +: $ 0.37233
100 +: $ 0.28552
500 +: $ 0.22570
1000 +: $ 0.18056
Stock 1947Can Ship Immediately
$ 0.47
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: TIP11*
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TIP111G application field and working principle

The TIP111G is a high power NPN linear Silicon Darlington transistor designed for use in high power audio, linear and switching applications. It is designed as an advanced driver IC that optimally combines the best of both wide bandwidth bipolar transistors and high power MOSFETs. As the TIP111G is a single, bipolar junction transistor (BJT), it is well suited for applications requiring extremely robust output with low noise and distortion.

The TIP111G utilizes an advanced linear bipolar transistor design that combines a 2-ampere rated 100 volt rating with extremely low noise and excellent thermal performance. This device also features a very small package footprint, allowing for easy integration into a variety of end products. As a result, the TIP111G is well suited for a wide range of applications, including power and amplifier stages, switching applications such as relays and actuators, and linear power stages for higher power operations.

At the core of the TIP111G lies a 2-ampere rated 100 volt power rating. This high power rating ensures that the device is suitable for a wide range of switching and linear applications. At the same time, the TIP111G also offers a very small package footprint, making it ideal for high-density applications.

To work effectively, the TIP111G utilizes several key components in its design. The first is an emitter-base junction, which acts as a voltage-controlled device. This junction is normally open, allowing electrons to flow freely between the emitter and the collector. When a voltage is applied to the base of the transistor, the junction closes, blocking the flow of current. This, in turn, regulates the amount of current flowing through the transistor.

The second component of the TIP111G is the collector region. This region is designed to allow the transistor to sink large amounts of current, allowing it to effectively drive high power loads. In addition, the collector region is also designed to enable fast switching times, making it perfect for switching applications.

Finally, the TIP111G also has a built-in thermal protection system. This system monitors the temperature of the device and shuts the device down if the temperature exceeds a certain threshold. This is essential in order to protect the device from damage due to excessive heat.

The TIP111G’s combination of a high power rating, thermal protection, and small size makes it an excellent choice for a variety of audio, linear, and switching applications. Its excellent linear performance, combined with its wide bandwidth character, ensures that any application requiring an extremely robust output with low noise and distortion will benefit from the use of the TIP111G.

The specific data is subject to PDF, and the above content is for reference

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