Allicdata Part #: | 497-6761-5-ND |
Manufacturer Part#: |
TIP122FP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS NPN DARL 100V 5A TO-220FP |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 5A ... |
DataSheet: | TIP122FP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 20mA, 5A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 3A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Base Part Number: | TIP122 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TIP122FP is a PNP Complementary Silicon Power Transistor, commonly referred to as a BJT, and is a member of the single transistor family. It is a highly reliable transistor designed for medium power applications and can be used for switching and amplification purposes. The main features and technical specifications of this device are given in the table below.
Parameter | Value |
---|---|
Collector-Base Voltage | -60V |
Collector-Emitter Voltage | -80V |
Collector Current | 5A |
Gain Bandwidth Product | > 6MHz |
Operating and Storage Temperature | -55 to +150°C |
The TIP122FP is widely used in general amplifier circuits, motor control and automotive, telecom, power and audio applications. This device is recommended for use in low voltage, high speed switching applications. It is also an ideal choice for applications requiring high current switching such as DC motor control and other medium power switching circuits. The features of this device make it suitable for use in battery powered applications such as automotive and telecom applications.
The TIP122FP has an integrated collector-emitter saturation voltage of VCE(SAT) of less than 1V and a typical collector-emitter saturation current of ICES of 5A. This makes it ideal for use in low voltage switching applications. This device also has a high gain bandwidth product of > 6MHz which makes it suitable for use in high speed switching applications.
The working principle of the TIP122FP is simple - two PNP transistors and two NPN transistors are connected in a common base circuit configuration. The base current of the transistors is controlled by the base-emitter voltage and the collector-emitter voltage. When a current is applied to the base, it causes current to flow through the two transistors. The current then flows to the collector and the emitter, creating a voltage drop between them. This voltage drop is the output of the transistor. The output of the transistor can be used for switching, amplification or other applications.
The TIP122FP is a versatile and dependable transistor, making it a great choice for many types of applications. Its wide range of uses and features make it ideal for use in low voltage, high speed switching applications as well as for use in DC motor control and other medium power switching circuits. In addition, its high gain bandwidth products make it suitable for use in audi, automotive, telecommunication, power and audio applications.
The specific data is subject to PDF, and the above content is for reference
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