TIP126G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TIP126G is a Darlington Transistor designed for general purpose switching and amplification biasing. It is composed of two diodes connected to the base. The emitter is connected to the first diode, while the collector is connected to the second diode. A Darlington pair is a combination of two bipolar transistors, usually two NPNs, with their collectors connected and their base resistors connected together. This type of transistor is more efficient than a single transistor, as the current gain is much greater.

The TIP126G is a member of the STMicroelectronics STripFET™ family of power semiconductor devices. STripFET™ is an acronym for Stripline Field Effect Transistor, incorporated with state-of-the-art switching components and building block monolithic devices. This revolutionary family of devices offers a greater level of integration and enhanced power efficiency than any other type of transistor to date.

The TIP126G is available in throughhole package and is rated for both low and high power operation. It has a current gain of up to 600, a pulse current rating of up to 4 amps, and a voltage gain of up to 30 volts with a minimum of 80mA of collector current. The package is optimized for high frequency operation with a minimum of 75 mA of current drive and a maximum operating frequency of up to 1MHz.

The TIP126G is well suited for use on power transistors in circuits requiring fast switching times and high efficiency. It is widely used in automotive, industrial and consumer applications as it provides a low power, low dissipation and fast switching solution for simple circuit designs. It is most commonly used in switching power supplies, DC-DC converters, battery management systems, self-oscillating circuits and high-temperature applications. It is also used in high-efficiency solar cell converters and wind turbine power supply designs.

The success of this device is due to its remarkable working principle. It utilizes a bipolar junction transistor (BJT) for amplification, as well as a cross-coupled thyristor for triggering. The BJT provides an amplification of the voltage applied at its collector, whereas the thyristor enables high-speed switching of the output of the BJT.

The TIP126G has a maximum operating temperature of 140°C, making it suitable for extreme conditions. Due to its low power requirements, it is also suitable for energy-conscious circuit designs. The device reduces power dissipation by using bipolar transistors as the switching element. As a result, it delivers faster switching times, significantly reducing power loss by up to 30%.

Overall, the TIP126G is an excellent choice for a wide variety of applications. It has a high current gain, providing up to 600 times amplification. It also has high efficiency and power dissipation capabilities, making it suitable for low and high power operation. The device can be used for fast switching applications, battery management systems and solar cell or wind turbine power supply designs.

The specific data is subject to PDF, and the above content is for reference