Allicdata Part #: | TIP127GOS-ND |
Manufacturer Part#: |
TIP127G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP DARL 100V 5A TO220AB |
More Detail: | Bipolar (BJT) Transistor PNP - Darlington 100V 5A ... |
DataSheet: | TIP127G Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | PNP - Darlington |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 20mA, 5A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 3A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Base Part Number: | TIP12* |
Description
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?The TIP127G is a silicon epitaxial-base, NPN power transistor in monolithic Darlington configuration and is particularly mounted in TO-220 plastic package. This transistor is used to increase power gain output for audio and general purpose amplifier applications. It can also be used for motor control and switching applications. The TIP127G is qualified for high energy pulses in the linear mode of operation and is designed to withstand high energy pulses in saturation or cut-off regions. The device provides high power gain, low noise and high efficiency. It has a wide base-emitter voltage (VBE) range, and high breakdown voltage, low saturation voltage and low leakage current. It is designed to operate in the linear mode of operation, as it is capable of delivering high dc current gains up to 20. The device is also capable of handling high current loads while maintaining low saturation voltage and low power dissipation. It has low thermal resistance and is capable of dissipating high power levels. In addition, the device has a high switching speed and operates over a temperature range of -65°C to +150°C. The TIP127G features a pair of current gain transistors. Its number differs in the order of gain, depending on the current rating. For example, the TIP127G is rated to a gain of 28 and can be used in a circuit drawing a maximum of 2A, 15V of base voltage, and 0.7V of collector to emitter voltage.The TIP127G works through the process of bipolar conduction, where the electrons that carry the charge flow through the transistor. The base-emitter junction acts as a diode, that controls and modulates the current to the collector, which in turn controls the current to the output. The voltage at the collector-emitter junction is controlled by the voltage at the base-emitter junction. This enables the use of low current inputs while allowing large currents to flow from the collector. The output current from the collector is then passed through the load, where it is controlled and regulated.In conclusion, the TIP127G is a versatile NPN power transistor that exhibits excellent characteristics for various applications, such as audio and general purpose amplifiers, motor control and switching. It is capable of delivering high power gain, low noise and high efficiency, and is designed to operate in the linear mode of operation with high current gains. The TIP127G is suitable for high energy pulses and has a wide base-emitter voltage range, and is capable of handling high current loads while maintaining low saturation voltage and low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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