Allicdata Part #: | TK12A50D(STA4QM)-ND |
Manufacturer Part#: |
TK12A50D(STA4,Q,M) |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 12A TO-220SIS |
More Detail: | N-Channel 500V 12A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK12A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.77855 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A transistor is a device that amplifies and switches an electric signal. It is composed of semiconductor material, usually with at least three terminals for connection to an external circuit. The TK12A50D is a type of transistor known as a field-effect transistor (FET). This device belongs to the group of single FETs, which are designed for varying implementation purposes.
The TK12A50D is a well-known device, used reliably in numerous applications. It has been found to be particular useful for switching and amplifier purposes, employing an N-channel MOS-gate to achieve these tasks. In addition, the device can be used for these purposes in both low and high power applications. The device is also marketed as the STA4Q and the M series, however, all three of these devices rely on the same principles of operation.
The TK12A50D operates using a JFET (junction field-effect transistor) suggested high-frequency circuit. It works by modulating the current across the current source and the drain-source path. Using the same principle, the device can also perform high-frequency switching and amplification, however, in this case, it relies on modulating the voltage across the gate and source, rather than the current source and drain-source path.
The TK12A50D operates on the principle of low voltage, low beginning gate current and low, negative gate to source control. This combination allows the device to accommodate a variety of applications depending on the requirements of the circuit.
For amplifier applications, the TK12A50D uses a low voltage supply and a low gate current to control the current flow between the drain and source, modulating the signal while controlling the output\'s level. This makes the device suitable for various types of applications, such as audio amplifiers, stereo amplifiers, instrument amplifiers and much more.
For switching purposes, the low beginning gate current and low, negative gate to source control serve to protect the main signal from any external disturbances. By modulating the signal between the gate and source, the device ensures that any disturbances are eliminated and that the signal is accurately controlled and switched, making it ideal for applications such as message switching systems and digital signal processors.
The low voltage, coupled with low and negative control voltage supply makes the TK12A50D an ideal choice for those looking for an effective, reliable and efficient transistor-based solution for their needs. It\'s suitable for both low and high power applications, can be employed in both amplifier and switching applications and provides excellent signal accuracy and control capability.
The specific data is subject to PDF, and the above content is for reference
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