TK12P60W,RVQ Discrete Semiconductor Products

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A TK12P60W is a type of enhancement mode n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that operates in an amplifier or switch applications. It has a high input resistance and low output resistance, which makes it ideal for amplifier applications. It can also be used in power supplies, converters, regulators, and other circuits.

The TK12P60W has a drain-source breakdown voltage of -24V, a gate-source threshold voltage of -3V, a drain current of -40A, and a maximum power dissipation of 1225mW. The device has an on-resistance of 0.6Ω and an input capacitance of 452pF. It has an operating temperature range of -55°C to +150°C and can be operated at frequencies up to 2GHz.

The TK12P60W is typically used in RF, low noise amplifier (LNA), and power amplifier (PA) applications. It is also used in industrial and consumer electronic products such as electronic switching, lighting controls, and motor speed controls. TK12P60W can also be used in automotive applications such as power steering, transmissions, and motor control.

The main principle behind the TK12P60W MOSFET is that it relies on a thin layer of positively-charged silicon dioxide that forms an insulator between the conductive substrate and the gate terminal. When an electric signal is applied to the gate terminal, the static electric field created by the signal causes a change in the width of the gate-source channel and this causes change in the flow of current from source to drain. This effect is known as field-effect. By changing the amount of voltage applied to the gate terminal, the MOSFET can be used as an amplifier or switching device.

The TK12P60W is a widely used MOSFET in various applications and is the choice of many engineers and hobbyists alike. It is ideal for RF and LNA applications, as well as high voltage and power supply applications. It is also used in many audio applications to provide improved sound quality. The TK12P60W is an excellent choice for any application where low noise and low power requirements are critical.

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