Allicdata Part #: | TK12A60D(STA4QM)-ND |
Manufacturer Part#: |
TK12A60D(STA4,Q,M) |
Price: | $ 1.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 12A TO-220SIS |
More Detail: | N-Channel 600V 12A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | TK12A60D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.95460 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 550 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK12A60D (STA4, Q, M) is a single MOSFET (metal oxide semiconductor field effect transistor) characterized by its fast switching, low on-state resistance, and high avalanche current capabilities. As a result, the TK12A60D can be used in a variety of switchmode DC-DC converters and low-side switching applications. Additionally, the device can be used in many other scenarios where fast switching, low on-state resistance, and high avalanche current are desired.
A MOSFET is a voltage-controlled field effect transistor. It has four terminals, labeled drain, gate, source, and body (or substrate). The source and drain terminals are the two output terminals, and the gate terminal is the input. The body terminal is an optional connection to VSS. The transistor operates when a voltage difference (VGS) is applied between the gate and source terminal (VGS = VGS – VSS). When the input voltage exceeds a certain threshold, called the gate-source threshold voltage (VGS-th), the MOSFET turns on and allows current to flow between the source and drain.
The TK12A60D features a fast switching speed over a wide range of drain-source voltages up to 60V. This is achieved through a low on-state resistance (RDS(on)) of just 6.0 mΩ. In addition, the device can handle very high avalanche currents, up to 70A. This makes it suitable for a wide range of applications where fast switching and high current capabilities are required.
The TK12A60D can be used in a variety of switchmode DC-DC converters, such as buck, boost, or flyback converters. In such converters, the TK12A60D is used to rapidly control the switching of the device, while consuming low power. The MOSFET is also suitable for low-side switching applications, such as DC motor control, as its low on-state resistance, fast switching speed, and high current capability make it a great choice for such applications.
The TK12A60D can also be used in a variety of other applications such as power supply converter, portable electronics, and lighting control. Thanks to its fast switching speeds, low on-state resistance, and high current capabilities, it is well-suited for a variety of scenarios.
In summary, the TK12A60D single MOSFET is a great choice for switchmode DC-DC converters and low-side switching applications. With its fast switching speed, low on-state resistance, and high current capabilities, it is well-suited for a variety of applications where such capabilities are required. The TK12A60D is a great choice for those looking for a reliable and efficient MOSFET.
The specific data is subject to PDF, and the above content is for reference
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