Allicdata Part #: | TK12A60WS4VX-ND |
Manufacturer Part#: |
TK12A60W,S4VX |
Price: | $ 2.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 11.5A TO-220SIS |
More Detail: | N-Channel 600V 11.5A (Ta) 35W (Tc) Through Hole TO... |
DataSheet: | TK12A60W,S4VX Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.33113 |
Vgs(th) (Max) @ Id: | 3.7V @ 600µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 890pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 5.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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.The TK12A60W and S4VX are two well-known transistors, both of which are field-effect transistors (FETs). These two devices are used in a variety of applications, and their working principles are relatively simple. The TK12A60W and S4VX are both single FETs, meaning that they contain only one gate and a single drain diffusion region. The gate of a single FET can be used to control the current flow between the source and drain.
The TK12A60W is an N-channel enhancement-mode power FET, which is used in a variety of high-power applications such as automotive and industrial electronics. It has a high-voltage tolerance and low-on resistance, making it ideal for high-power switching applications. The TK12A60W has a very low gate threshold voltage, making it suitable for use with low-level logic circuits. Additionally, it is also very fast switching, with a maximum switching speed of 170ns.
The S4VX, on the other hand, is a P-channel enhancement-mode power FET. It is used in applications such as power supply, audio amplifiers, and DC-DC converters. Additionally, it is also used in switching applications such as solenoid control and motor control, as well as in power switching applications such as AC inverters and DC switches. The S4VX is a very versatile device, and can operate at temperatures up to 150°C. It also has a very low gate threshold voltage, making it suitable for low-level logic circuits.
Both FETs operate on the principle of electrostatic field effect. This means that when a voltage is applied to the gate terminal of the FET, an electric field is created which controls the current flow between the source and drain. This electric field is created by the electrical charge that is on the gate, and it can be used to regulate the flow of current between the source and the drain. This is known as the “body effect”, and it allows the FET to be used in various applications.
The TK12A60W and S4VX are both widely used transistors in a variety of applications. Their flexibility and low-on resistance make them ideal for high-power switching applications, and their low gate threshold voltage makes them suitable for low-level logic circuits. Both FETs are also extremely reliable, and are capable of operating for long periods of time without degradation.
The specific data is subject to PDF, and the above content is for reference
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