| Allicdata Part #: | TK12J60UF-ND |
| Manufacturer Part#: |
TK12J60U(F) |
| Price: | $ 3.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 600V 12A TO-3PN |
| More Detail: | N-Channel 600V 12A (Ta) 144W (Tc) Through Hole TO-... |
| DataSheet: | TK12J60U(F) Datasheet/PDF |
| Quantity: | 1436 |
| 1 +: | $ 2.96100 |
| 50 +: | $ 2.38165 |
| 100 +: | $ 2.16991 |
| 500 +: | $ 1.75710 |
| 1000 +: | $ 1.48189 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P(N) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 144W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 10V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| Series: | DTMOSII |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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The TK12J60U(F) is a Field Effect Transistor (FET) designed by Toshiba, most commonly found on Printed Circuit Boards (PCBs) in state-of-the-art digital appliances. It is classified as a single FET, meaning only one gate is present in the construction. This FET is used for a variety of functions, including digital switching, power control, clock synchronisation, and pulse shaping. It is also used in many high-performance digital applications.
The core of this FET is made up of two layers: a source and a drain, both of which consist of three parallel conducting channels. These channels possess a positive and negative polarisation, the latter being the most prominent of the two. It is this bipolarisation that makes FETs so desirable for digital applications. The source consists of metal-oxide semiconductors (MOS) that form a field of negativisation that runs between the two layers of the FET. This negative field acts as a barrier to electrons, forcing them to divert their path when the FET is in operation.
The gate of the FET is the control element on the FET. It is the link between the source and drain, and is able to adjust the flow of current across the two simultaneously. By doing this, the FET can retain electricity when no current is being applied to the gate, or allow a current to flow when a voltage is applied. The TK12J60U(F) gate is especially user-friendly, with a wide range of voltages being able to be supplied to the gate. As such, users are able to fine-tune their device\'s performance in a number of ways.
One of the main uses of the TK12J60U(F) is as a switch in digital logic circuits. When a voltage is supplied to the gate of the FET, it forms a conducting channel between the source and the drain. This current is then able to pass through the device, allowing the circuit to experience a change in its output. The FET can also be used as a voltage-regulator for applications such as power control, thereby allowing current to be blocked from going out to the device. This makes the TK12J60U(F) an invaluable tool in many digital appliances.
In summary, the TK12J60U(F) is a single FET manufactured by Toshiba that is typically found in circuit boards of digital devices. It is able to control the flow of electricity between different paths using the conductivity of a field of negativisation created by two loosely related layers. This field is maintained by a gate that is able to be controlled through the application of a voltage. The main uses of this FET are digital switching, power control, clock synchronisation, and pulse shaping, making it a key component of modern digital appliances.
The specific data is subject to PDF, and the above content is for reference
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TK12J60U(F) Datasheet/PDF