
Allicdata Part #: | TK20A60UQM-ND |
Manufacturer Part#: |
TK20A60U(Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 20A TO-220SIS |
More Detail: | N-Channel 600V 20A (Ta) 45W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 303 |
0 +: | $ 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1470pF @ 10V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | DTMOSII |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK20A60U (Q,M) transistor is a type of field-effect transistor (FET) commonly used in many different kinds of industrial and consumer electronics. It is perhaps most often seen in its MOSFET (metal-oxide–semiconductor FET) form, which has the advantage of much lower power dissipation in comparison to its bipolar equivalent due to its low "on" resistance. In fact, the power savings can be considerable, sometimes reaching up to 50 percent in comparison.
Essentially, the TK20A60U (Q,M) is a four-layer MOSFET device with a gate, drain and source. The gate is a standard aluminum gate oxide structure, which relies on a gate oxide to create an electric field between the source and the gate. The field increases or decreases the current flow between the drain and the source, thus allowing for effective voltage control of the device. The gate also has supplemental gate oxide layers that are deposited to improve the device’s breakdown voltage characteristics.
The TK20A60U (Q,M) is specifically designed for use in power switching applications, such as motor control. It can be used in a variety of applications, including the control of motors, amplifiers and audio power supplies, as well as for high-voltage switching applications. Its key features include its very low on-resistance, and its good linearity, which helps prevent distortion in audio and video signals. Its low gate charge also helps to reduce switching losses and has the potential to improve overall efficiency.
The TK20A60U (Q,M) has a very small footprint, making it suitable for use in both through-hole and surface mount applications. It is also easy to mount, and its typical vertical-mount versions can provide up to 400 volts of drain-to-source isolation. Other key features include low thermal impedance and a very low capacitance that helps reduce unwanted ringing and improve signal integrity.
In addition to its power switching applications, the TK20A60U (Q,M) is also useful in a variety of other applications. It can be used in digital-to-analog converters, in Amplifier and RF power control applications, and in audio and video processing. It is also useful in AC power control and line voltage regulation, as well as in DC power control and line regulation.
The TK20A60U (Q,M) is available in a variety of packages and sizes, making it ideal for a wide range of applications. In terms of advantages, its very low on-state resistance makes it ideal for switching applications such as motor control, and its lower capacitance helps reduce unwanted ringing and improve signal integrity. Its small footprint helps to minimize board space, and its dual vertical-mount configuration provides up to 400 volts of drain-to-source isolation. Finally, its wide range of packages and sizes make it suitable for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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