Allicdata Part #: | TK20P04M1RQ(S-ND |
Manufacturer Part#: |
TK20P04M1,RQ(S |
Price: | $ 0.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 40V 20A DPAK-3 |
More Detail: | N-Channel 40V 20A (Ta) 27W (Tc) Surface Mount DPAK |
DataSheet: | TK20P04M1,RQ(S Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.25423 |
Vgs(th) (Max) @ Id: | 2.3V @ 100µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 985pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Series: | U-MOSVI-H |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TK20P04M1,RQ is a transistor a type of device that acts as an electronic switch. Transistors are used in a variety of applications including amplifying and switching circuits and are classified by their type, material, and number of terminals. Transistors come in many shapes and sizes and have the ability to turn current on and off.TK20P04M1,RQ is an N-channel enhancement mode metal–oxide–semiconductor field-effect transistor (MOSFET). MOSFETs are generated and controlled by an electrical charge to allow or restrict current flow. This MOSFET is a single device with 3 terminals (source, gate and drain). It is also known as an insulated gate bipolar transistor (IGBT), which is a type of power transistor.TK20P04M1,RQ has a wide variety of applications in both analog and digital circuits. It is widely used in power electronic applications such as motor and load drivers, audio amplifiers, and RF transmitters. In digital circuits, it can be used as a switch to control various functions, such as output stages of logic gates and memory cells.TK20P04M1,RQ works on the principle of the Metal-oxide Semiconductor Field Effect Transistor (MOSFET). A MOSFET can be used to either enhance (“on”) or weaken (“off”) current flow between the source and drain terminals by controlling the voltage on the gate terminal. In the case of TK20P04M1,RQ, the enhancement mode means that when the gate terminal is taken above a threshold voltage, the channel between the source and the drain is opened and current passes from the source to the drain. Conversely, when the voltage on the gate terminal falls below the threshold voltage, the current is shut off and no current flows in the channel.The on-resistance of the TK20P04M1,RQ is an important parameter that governs the amount of current the device can handle. The lower the on-resistance, the higher the current that can be switched by the device. On the other hand, the breakdown voltage of the device is another important factor, which determines the maximum voltage that can be applied across the channel of the device without any damage.The TK20P04M1,RQ can switch current at very high frequencies, making it suitable for high-speed applications. It also has a good power dissipation capability, allowing for heat management and control. Generally, the device offers excellent reliability and durability, making it suitable for many applications. In conclusion, TK20P04M1,RQ is an N-channel MOSFET which is a single transistor with source, drain, and gate terminals. It is an enhancement type device which is used in both analog and digital circuits. It can be used to amplify, switch and control various functions. Moreover, the device has a good on-resistance, breakdown voltage and power dissipation capabilities making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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