Allicdata Part #: | TK20S04K3L(T6L1NQ-ND |
Manufacturer Part#: |
TK20S04K3L(T6L1,NQ |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 40V 20A DPAK-3 |
More Detail: | N-Channel 40V 20A (Ta) 38W (Tc) Surface Mount DPAK... |
DataSheet: | TK20S04K3L(T6L1,NQ Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.35501 |
Series: | U-MOSIV |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 38W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK+ |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The TK20S04K3L (T6L1,NQ) is one of the more popular transistors in the field of Field Effect Transistors (FETs), particularly MOSFETs. This particular version is a Single Transistor. It is typically used in power supplies and other power conversion applications.
The TK20S04K3L is built in a special MOSFET structure which allows it to have both a good switching speed and low on-state resistance. This makes it well suited for a number of power applications, such as DC to DC converters, PWM and current mode switching, etc. The on-state resistance is lowest at temperatures between 25°C and 70°C, making it ideal for high temperature operation. It has a typical RDS(ON) (drain-source on-state resistance) value of 2.03Ω.
The TK20S04K3L is designed to operate from a supply voltage of 4.5V up to 20V. The maximum drain current is 75A at an ambient temperature of 25°C, making it suitable for high power loads. It is also protected against reverse biasing, with its breakdown voltage of 20V. It has a fast switching time of 40ns, making it very well suited for PWM applications.
The TK20S04K3L is also protected against input leakage currents by a series of MOSFET diodes, which serve as a protection against electrostatic discharge (ESD). It also has protection against reverse biasing, as well as a low input impedance, which ensures that it behaves properly even under fast switching conditions.
In terms of its application field, the TK20S04K3L is primarily used in high power switching applications. As mentioned above, it is especially well suited for DC to DC converters and PWM applications. It can also be used in linear applications such as synchronous rectifiers and signal transmission.
The working principle behind the TK20S04K3L is quite simple. As its name implies, it is a field effect transistor, meaning that it is controlled by a voltage applied to two terminals, the gate terminal and source terminal, rather than a current. When a positive voltage is applied to the gate terminal, the channel of the transistor is activated and a current starts to flow between the source and drain terminals. When the gate voltage is reduced, the current flow is reduced accordingly. This is the basic principle behind all FETs, including the TK20S04K3L.
In conclusion, the TK20S04K3L is a popular MOSFET transistor with a wide range of applications. It is well suited to high power and high frequency switching applications due to its low on-state resistance and fast switching time. It is protected against ESD and reverse biasing, making it a reliable and robust component. And its working principle is quite simple, making it easy to work with.
The specific data is subject to PDF, and the above content is for reference
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