TK20V60W5,LVQ Discrete Semiconductor Products |
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Allicdata Part #: | TK20V60W5LVQTR-ND |
Manufacturer Part#: |
TK20V60W5,LVQ |
Price: | $ 1.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 20A 5DFN |
More Detail: | N-Channel 600V 20A (Ta) 156W (Tc) Surface Mount 4-... |
DataSheet: | TK20V60W5,LVQ Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.97130 |
Series: | DTMOSIV |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 300V |
FET Feature: | -- |
Power Dissipation (Max): | 156W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 4-DFN-EP (8x8) |
Package / Case: | 4-VSFN Exposed Pad |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TK20V60W5, LVQ field effect transistor (FET) is one of the latest commercial products made by Kingbright. This device is a silicon N-channel enhancement-mode vertical D-MOSFET, with an operating mode of voltage. The main application for this device includes AC/DC switching, relay control, motor drive and other applications which require high speed switching, as well as low on-state resistance.
The TK20V60W5 LVQ device is built on two-terminal configuration and is based on Schottky diode technology, which minimizes the switching time of the device. This device is designed to provide reliable and high performance levels while remaining cost-effective. It is also designed to withstand up to 60V DC of operating voltage and a maximum operating temperature of 125°C. The device also has a five pin configuration in the standard 9.4mm x 5.4mm "SOT-89" package.
The operating principle of this device is based on the difference in electrical charge between the N-channel and P-channel. The P-channel is the gate and the N-channel is the source. When a voltage is applied to the gate, the gate will attract electrons from the N-channel and create a depletion zone, thus allowing current to flow through the device.
The TK20V60W5, LVQ device is used in various applications, such as AC/DC switching, relay control, motor drive and other high speed switching applications. This device is capable of providing low on-state resistance and operation at a high speed. The device is also capable of providing reliable performance levels while remaining cost-effective. In addition, the device can withstand operating voltages of up to 60V DC and a maximum operating temperature of 125°C.
In conclusion, the TK20V60W5, LVQ is a commercial field effect transistor (FET) used for various applications requiring high speed switching, such as AC/DC switching, relay control, motor drive and other applications. This device has a two-terminal configuration and is based on Schottky diode technology, which minimizes the switching time. The device is capable of providing reliable performance levels and can withstand up to 60V DC of operating voltage and a maximum operating temperature of 125°C.
The specific data is subject to PDF, and the above content is for reference
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