Allicdata Part #: | TK20C60WS1VQ-ND |
Manufacturer Part#: |
TK20C60W,S1VQ |
Price: | $ 4.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 600V 20A I2PAK |
More Detail: | N-Channel 600V 20A (Ta) 165W (Tc) Through Hole I2P... |
DataSheet: | TK20C60W,S1VQ Datasheet/PDF |
Quantity: | 38 |
1 +: | $ 4.20840 |
Series: | DTMOSIV |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 155 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 300V |
FET Feature: | -- |
Power Dissipation (Max): | 165W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The TK20C60W,S1VQ is a single n-channel enhancement-mode, general-purpose field-effect transistor (FET). A FET is a type of transistor that works by applying an electric field in order to change the conductivity between two regions. In the case of the TK20C60W,S1VQ, this electric field is applied between the source and drain terminals, while the gate terminal regulates the electric field that passes through.
The TK20C60W,S1VQ is an enhancement-mode FET, meaning that the gate is used to create the electric field to enhance the conductivity between the source and drain. When the gate is completely open, the TK20C60W,S1VQ does not conduct current and is in the off state; however, once the gate is opened and the electric field between the source and drain terminals is activated, then current will flow between the two regions. This state is known as the on state.
The TK20C60W,S1VQ is optimized for signal switching and load switching applications, such as those found in consumer electronics and automotive applications. The device features a low on-state resistance (Rds(on)) to minimize power dissipation, and a fast response time to reduce signal delays. The device also features a low gate-threshold voltage (V-GS(th)) which allows the device to be used in wide-voltage applications.
The TK20C60W,S1VQ has a wide range of operation conditions and performance characteristics that make it ideal for a variety of applications. The device is also suitable for use in power supply circuits, DC/DC converters, motor control applications and low-side switch circuits.
The TK20C60W,S1VQ is a versatile, high-performance FET with a variety of applications. Its low on-state resistance, fast response time and low gate-threshold voltage make it an excellent choice for switching applications. The device is also capable of operating in a wide range of conditions, making it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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