TK20S06K3L(T6L1,NQ Allicdata Electronics
Allicdata Part #:

TK20S06K3L(T6L1NQ-ND

Manufacturer Part#:

TK20S06K3L(T6L1,NQ

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 60V 20A DPAK-3
More Detail: N-Channel 60V 20A (Ta) 38W (Tc) Surface Mount DPAK...
DataSheet: TK20S06K3L(T6L1,NQ datasheetTK20S06K3L(T6L1,NQ Datasheet/PDF
Quantity: 1000
2000 +: $ 0.35501
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Series: U-MOSIV
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Rds On (Max) @ Id, Vgs: 29 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
FET Feature: --
Power Dissipation (Max): 38W (Tc)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The TK20S06K3L (T6L1, NQ) is a type of transistor that belongs to the family of Field Effect Transistors (FETs) and is categorized as a single MOSFET. This particular type of transistor is a high-quality MOSFET, capable of low voltage and low gate charge operations. It has been used in a variety of applications such as in CPUs for computers and in switching power supplies.

MOSFETs are devices consisting of metal oxide semiconductor field effect transistor which utilizes MOS capacitors instead of the usual BJT transistors that are normally used in conventional transistors. MOSFETs are specifically designed to operate with low power with ease in dissipating heat and they offer excellent performance in both DC and AC circuits.

The working principle of the TK20S06K3L is based on the fact that a field-effect transistor is a type of transistor with three terminals: source, drain, and gate. The gate is controlled by a voltage, instead of a current. The gate controls the amount of current that can flow between the source and drain. When the gate voltage is applied, it attracts an electron to its surface, forming an inversion layer. This reduces the resistance between the source and the drain.

In the case of the TK20S06K3L, the operating voltages are 9V and 12V with low gate charge and low on resistance. As mentioned before, this transistor is used in a variety of applications such as in CPUs for computers and in switching power supplies. The TK20S06K3L\'s high-quality features along with its low power operation makes it a great choice for these applications.

The main advantage of the TK20S06K3L is its low power operation. This is due to its low gate charge and low on resistance. As a result, less power is consumed and less heat is generated. Also, its low power operation helps to reduce the overall package size, making it even more suitable for use in narrow space applications.

The TK20S06K3L also has excellent thermal performance, with an operating temperature range of -55°C to +175°C. This added with its low power operation means it can efficiently handle high power requirements.

In conclusion, the TK20S06K3L is a high-quality MOSFET with low voltage and low gate charge operations. Its features make it suitable for use in a variety of applications, such as in CPUs for computers and in switching power supplies. It has excellent performance in both DC and AC circuits and provides excellent thermal performance with an operating temperature range of -55°C to +175°C.

The specific data is subject to PDF, and the above content is for reference

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