TPC6008-H(TE85L,FM Allicdata Electronics
Allicdata Part #:

TPC6008-H(TE85LFM-ND

Manufacturer Part#:

TPC6008-H(TE85L,FM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 30V 5.9A VS6
More Detail: N-Channel 30V 5.9A (Ta) 700mW (Ta) Surface Mount V...
DataSheet: TPC6008-H(TE85L,FM datasheetTPC6008-H(TE85L,FM Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.3V @ 100µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: VS-6 (2.9x2.8)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 10V
Series: U-MOSVI-H
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TPC6008-H(TE85L,FM is a type of single field effect transistor (FET) which has a wide range of applications. In general, it is used to control the flow of power between two points, either allowing or blocking the current based on the voltage applied to the gate.

A FET is an electronic device with three terminals, the source, the drain, and the gate. The source is where the current enters the circuit, the drain is where the current exits the circuit, and the gate is where the control voltage is applied. When a voltage is applied to the gate, an electric field will be created which is then used to either block or allow the current to flow between the source and the drain.

The TPC6008-H(TE85L,FM is a single-gate FET, which means it only has one gate used for controlling the flow of current. It is typically used for applications such as amplifiers, switching, and other applications where low voltage and low power are required. It has a panel mounting type, which means it can be easily integrated into existing or new designs.

The TPC6008-H(TE85L,FM has a maximum drain current of 5A and a drain-gate voltage of 20V. The device has a nominal power dissipation of 11W and is rated for operation up to 105°C. The turn-on and turn-off times are also quite low, which minimizes power loss and makes this device well-suited for high-speed applications.

The TPC6008-H(TE85L,FM is well-suited for many applications and provides a wide range of benefits. It is highly efficient and produces very low noise, making it suitable for use in sensitive electronic circuits. In addition, the device has high gain and low power consumption, making it ideal for applications where energy efficiency is crucial.

The TPC6008-H(TE85L,FM is an excellent choice for any application requiring the use of a field effect transistor. It is highly efficient and produces very low noise, making it suitable for use in sensitive electronic circuits, and it also has a wide voltage range, low power dissipation, and a panel mount type. In addition, it has a long service life and a high operating temperature range, making it ideal for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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