Allicdata Part #: | TPC6104(TE85L,F,M)-ND |
Manufacturer Part#: |
TPC6104(TE85L,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 20V 4.5A VS6 2-3T1A |
More Detail: | P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount V... |
DataSheet: | TPC6104(TE85L,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 200µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | VS-6 (2.9x2.8) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1430pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 5V |
Series: | U-MOSIII |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 2.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The TPC6104 (TE85L, F and M) are field-effect transistors (FETs) used for amplifying or switching signals. They are manufactured with a technology called Complementary Metal Oxide Semiconductor (CMOS), which results in a small package size, low power consumption and low price. The TPC6104 is a single-gate device with two independent gates, one active and one passive. The gate is typically connected to a supply voltage and the source and drain electrodes are connected to external circuits and devices to which the TPC6104 will be connected.
The TPC6104 can be used for a variety of applications, such as in power related circuits, signal amplifiers, and output drivers. In these applications, the device acts as a switching device, where the voltage applied to the gate will determine the output signal level. The TPC6104 is suitable for operating in low-voltage conditions, and it is ideal for applications where low power consumption is needed. The device also has low on-resistance and good thermal performance, making it useful for applications such as data converters, voltage regulators, and motorized applications.
The working principle of a field-effect transistor is based on an electric field controlling the conductivity of their channel. The TPC6104 is a type of FET known as a metal-oxide-semiconductor FET, or MOSFET. The source, drain and gate of the TPC6104 are connected to an external source of voltage, such as a battery or a circuit. The gate-to-source voltage applied to the TPC6104 determines the current flow between the source and the drain, and thus, it can switch the transistor on and off and control the output signal.
When the gate voltage is above a certain threshold, the transistor will be in its “on” state and allow current to pass through it. When the gate voltage is below the threshold, the transistor will be in its “off” state, and the source-to-drain current flow will be reduced. The gate voltage can be modulated to vary the signal level to the output, making it suitable for applications such as signal amplifiers and signal drivers. The TPC6104 also has good thermal performance and low on-resistance, making it suitable for power related applications.
In summary, the TPC6104 is a single-gate, field-effect transistor with two independent gates, one active and one passive. It is manufactured using the CMOS technology and is suitable for low-voltage conditions. It works by applying a voltage to the gate, which controls the current flow between the source and the drain, thus allowing the transistor to switch on and off and control the output signal. The TPC6104 is suitable for amplifying or switching signals and low-power operations, as well as power related circuits, signal amplifiers, output drivers, data converters and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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