| Allicdata Part #: | TPC6012(TE85LFM)-ND |
| Manufacturer Part#: |
TPC6012(TE85L,F,M) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 20V 6A VS6 |
| More Detail: | N-Channel 20V 6A (Ta) 700mW (Ta) Surface Mount VS-... |
| DataSheet: |  TPC6012(TE85L,F,M) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | U-MOSIV |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 5V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 630pF @ 10V |
| FET Feature: | -- |
| Power Dissipation (Max): | 700mW (Ta) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | VS-6 (2.9x2.8) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TPC6012 is a small signal N-Channel Enhancement Mode MOSFET designed for high performance general-purpose applications. It has three versions – TE85L, TE85F, and TE85M. In this article, we will discuss the application field and working principle of the TPC6012.
Application Field
The TPC6012 is designed for general-purpose applications such as power amplification, switching, and dc-to-dc converter applications. It is suitable for audio and high speed switching applications due to its low gate charge and high voltage capability. It can be used in many applications such as low level switching, power mosfets, load switching, remote control systems and automotive applications.Working Principle
MOSFET stands for metal-oxide semiconductor field-effect transistor. This type of transistor is a completion of the CMOS circuit which controls the electronic signals using the voltage for switching. MOSFETs are unipolar transistors that have three terminals — the source, the gate, and the drain. The source and the drain are connected to the n-type and p-type layers, respectively. The gate is placed between the two regions and is separated from them by a thin, insulating layer. When a voltage is applied to the gate terminal, it creates an electric field, which attracts electrons near it, creating a complete path between the source and the drain. The electrons flow through this path, creating a current. When the voltage is removed, the electric field disappears and the transistor turns off, stopping current flow between the source and the drain. This type of transistor is ideal for applications where high input-impedance and large current flows are required.The TPC6012 is designed to be a rugged, low noise and high-speed device. The low RDS(ON) for its package makes it suitable for low-power applications where heat dissipation is an issue. The high on-state drain current can support multiple loads at the same time. It also has an operating temperature range from -55°C to +175°C. The low gate charge can support high-speed applications. Finally, the slim package design makes it easy to integrate into narrow spaces.Conclusion
The TPC6012 is a small signal N-Channel Enhancement Mode MOSFET designed for high performance general-purpose applications. It is suitable for applications such as power amplification, switching, and dc-to-dc converter applications. It has low RDS(ON) for its package, making it suitable for low-power applications, high on-state drain current to support multiple loads, and a slim package design to integrate into narrow spaces. This makes the TPC6012 the ideal choice for many applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "TPC6" Included word is 20
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TPC6.8AHM3/87A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V TO27... |
| TPC6.8HM3/87A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 5.5V 10.8V TO27... |
| TPC6.8AHM3/86A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 5.8V 10.5V TO27... |
| TPC6.8HM3/86A | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 5.5V 10.8V TO27... |
| TPC6.8AHM3_A/H | Vishay Semic... | 0.34 $ | 1000 | TVS DIODE 5.8V 10.5V TO27... |
| TPC6.8AHM3_A/I | Vishay Semic... | 0.29 $ | 1000 | TVS DIODE 5.8V 10.5V TO27... |
| TPC6109-H(TE85L,FM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 30V 5A VS-6P-... |
| TPC6006-H(TE85L,F) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 40V 3.9A VS6 ... |
| TPC6104(TE85L,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 20V 4.5A VS6 ... |
| TPC6107(TE85L,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET P-CH 20V 4.5A VS6 ... |
| TPC6008-H(TE85L,FM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 5.9A VS6N... |
| TPC6009-H(TE85L,FM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 40V 5.3A VS6N... |
| TPC6010-H(TE85L,FM | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 60V 6.1A VS6N... |
| TPC6011(TE85L,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 30V 6A VS6N-C... |
| TPC6012(TE85L,F,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 20V 6A VS6N-C... |
| TPC6503(TE85L,F,M) | Toshiba Semi... | 0.11 $ | 1000 | X35 PB-F POWER MOSFET TRA... |
| TPC6111(TE85L,F,M) | Toshiba Semi... | 0.18 $ | 1000 | MOSFET P-CH 20V 5.5A VS-6... |
| TPC6113(TE85L,F,M) | Toshiba Semi... | 0.18 $ | 1000 | MOSFET P-CH 20V 5A VS6P-C... |
| TPC6110(TE85L,F,M) | Toshiba Semi... | 0.19 $ | 1000 | MOSFET P-CH 30V 4.5A VS6P... |
| TPC6901(TE85L,F,M) | Toshiba Semi... | 0.16 $ | 1000 | TRANS NPN/PNP 50V 6VSBipo... |
Latest Products
IRFL31N20D
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
IXTT440N055T2
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
IXTH14N80
MOSFET N-CH 800V 14A TO-247N-Channel 800...
IXFT23N60Q
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
IXTT72N20
MOSFET N-CH 200V 72A TO-268N-Channel 200...
IXFT9N80Q
MOSFET N-CH 800V 9A TO-268N-Channel 800V...