TPC6113(TE85L,F,M)

Vgs(th) (Max) @ Id:	1.2V @ 200µA
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	VS-6 (2.9x2.8)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	700mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	690pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	10nC @ 5V
Series:	U-MOSVI
Rds On (Max) @ Id, Vgs:	55 mOhm @ 2.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TPC6113 (TE85L, F, M) is a mosfet that is designed for high power use. It is an excellent choice for applications requiring high power switching and linear amplification. It is a single, field effect transistor (FET) that is highly efficient and can handle a large current range.The TPC6113 is an enhancement-mode MOSFET that can be used for applications that involve extremely high currents and voltage ratings. This type of FET is designed to work in an environment where it will dissipate a large amount of power and sustain a high voltage rating. A high voltage rating allows the FET to switch a load without having to worry about current limiters or thermistors.The TPC6113 has a simple yet effective design, which is based on the use of a P-MOSFET. This FET consists of a gate, source and drain. When an external voltage is applied to the gate, the source-drain channel is opened. This drains current through the load. The structure of this MOSFET is simpler than other types of FETs and it allows the FET to have high current operation. The TPC6113 has a low on-resistance of up to 20 milliohms, which enables it to achieve higher gains than other FETs.This FET is primarily used for switching and linear amplification. When it is used for switching applications, the FET can be used as a switch or relay for large loads. The TPC6113 has a low gate threshold voltage of 4 volts and a breakdown voltage of up to 50 volts. This makes it an ideal choice for applications that require a high voltage rating. When used for linear amplification, the TPC6113 can achieve high current gains and its low on-resistance allows it to achieve a low distortion at high frequencies.In addition to its many applications, the TPC6113 also has an excellent thermal performance. This FET has an effective thermal resistance of 0.25 degrees Celsius/Watt, which makes it suitable for applications where heat dissipation is an issue. The TPC6113 also has a maximum operating temperature of 150 degrees Celsius, which makes it ideal for applications that involve high temperatures.The TPC6113 MOSFET is an excellent choice for high power switching and linear amplifier applications. It is highly efficient, has a low on-resistance, a high voltage rating, and can handle a large range of current. Its thermal performance makes it suitable for applications where heat dissipation is an issue. In addition to its many applications, the TPC6113 is simple to use and can be used in a wide variety of applications, making it an excellent choice for any high-power device.

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