Allicdata Part #: | TPC6011(TE85LFM)-ND |
Manufacturer Part#: |
TPC6011(TE85L,F,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 6A VS6 |
More Detail: | N-Channel 30V 6A (Ta) 700mW (Ta) Surface Mount VS-... |
DataSheet: | TPC6011(TE85L,F,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | U-MOSIV |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 640pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | VS-6 (2.9x2.8) |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
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TP6011 is a single field-effect transistor (FET) that is available in three varieties – TE85L, TE85F, and TE85M. The transistor is a semiconductor device that is capable of controlled conduction of electric current between two terminals.
The FET works on the principle of an electric field controlling the current flow. It is different from the ordinary bipolar transistors, which use the principle of current control to regulate current flow. When a voltage is applied between the two FET terminals, the electric field is generated between them, which controls the current flow. This effect is known as field-effect control.
The TP6011 is commonly used in switching, amplifier, logic, and signal applications. It is especially suitable for devices where its low power consumption, high gain, and low noise levels make it advantageous. In switching applications, for instance, the TP6011 allows for high-speed switching at very low power levels.
The TE85L version is suitable for amplifiers. It features low power consumption and high open-circuit gain, making it the ideal choice for a wide range of amplifier applications. The TE85F FET, on the other hand, provides higher gains compared to the TE85L type and is thus more suitable for high-frequency applications. Finally, the TE85M is ideal for logic and signal applications since it provides both high gains and low power consumption.
In terms of design, the TP6011 is particularly useful because it also includes an additional gate pin to enable or disable the device. This pin can be controlled through digital circuitry and thus it simplifies the usage of the FET in different types of electronic designs. The TP6011 also has higher breakdown voltages and better reverse drain-source resistance values compared to other FETs.
In conclusion, the TP6011 is a single field-effect transistor that is available in three varieties – TE85L, TE85F, and TE85M. These devices are suitable for a wide range of applications, such as amplifier, switching, logic, and signal. It includes an additional gate pin for additional control, low power consumption, high open-circuit gain, and higher breakdown voltages.
The specific data is subject to PDF, and the above content is for reference
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