TSM100N06CZ C0G

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A TSM 100N06CZ C0G is a vertical-channel power metal-oxide semiconductor field-effect transistor (FET) with insulated gate. These transistors are widely used in a wide range of applications because of their characteristics such as low drain-to-source resistance, fast switching, and good channel temperature coefficient. The TSM 100N06CZ C0G is a n-channel MOSFET that utilizes advanced ETOX, high voltage planar process technology optimizing parameters such as resistance and capacitance. It provides excellent RDS(on) and low gate charge, and also supports very low gate charge drivers. The transistor also boasts low switching losses, fast switching times, excellent transconductance, and low on-resistance.

The TSM 100N06CZ C0G is most commonly used to switch the load circuit in DC-DC, battery management, and motor-control applications. It is very effective when interfacing with high speed logic and power management circuits, where fast switching and low on-state resistance are both crucial. The transistor is also useful for its ability to reduce electromagnetic interference (EMI) generation in power management systems.

The TSM 100N06CZ C0G is a vertical MOSFET, meaning that the gate is connected to the source which is electrically isolated from the drain. The gate is even further isolated from the body, creating a three-terminal structure that combines low on-resistance behavior with high voltage performance. The structure can enable circuits such as diode-connected power switching devices. This type of MOSFET is commonly used in the switching circuits of power supplies.

The TSM 100N06CZ C0G has a maximum drain-source voltage of 100V, maximum drain current of 100A and on-resistance of 8mΩ as well as a ruggedness rating of 8.2A. Additionally, it has a typical ESD capability of 2kV and a maximum gate threshold voltage of 4V. Its on-state resistance is comparable to the RDS(on) figure for the device, and is a measure of the resistance between the MOSFET’s drain and source terminals when it is turned on.

The TSM 100N06CZ C0G is a vertical DMOS power transistor that provides low on-resistance and high switching speed. It has excellent channel temperature coefficient, meaning that temperature variations of the device have limited effect on the on-state resistance over its operating range. Additionally, it has a limited gate charge, meaning that the power losses associated with charging the gate are minimized. Its high voltage performance makes it well suited for powering loads like DC-DC converters, battery management systems, and high speed logic and power management circuits.

In summary, the TSM 100N06CZ C0G is a vertical DMOS MOSFET with insulated gate. It offers excellent on-state resistance, high speed switching, and a temperature coefficient that enables its use over a wide range of temperatures. Its low on-resistance and fast switching are ideal for a variety of applications, such as DC-DC converters, battery management systems, and high speed logic and power management circuits. Additionally, its ESD capability and ruggedness enable it to withstand high levels of transient stress, making it an excellent choice for a variety of power supply applications.

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