TSM120NA03CR RLG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	11.7 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	9.2nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	562pF @ 15V
FET Feature:	--
Power Dissipation (Max):	33W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PDFN (5x6)
Package / Case:	8-PowerTDFN

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TSM120NA03CR RLG is one of the most popular and commonly used FETs (Field Effect Transistors) in the industry. It is a single n-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured for a range of applications in consumer, automotive, industrial and telecom applications. The MOSFET is powered by a supply voltage between 2.5 and 8V, and it offers a wide range of on-state resistance values from 0.03ohm to 5ohm. It is a high-speed device and can efficiently work with switching frequency up to 1.5MHz. Thermal resistance is another important parameter of the TSM120NA03CR RLG. Its maximum thermal resistance is 32 degrees Celsius per watt, which increases its heat dissipation capability and helps to prevent possible damage to the device. It has a good thermal stability, making it suitable for use in harsh environments, as well as in high ambient-temperature applications. Its total gate charge is 5nC maximum, making it suitable for low-power switch applications. Finally, its total package size is about 6mm, making it ideal for use in small high-density PCBs (Printed Circuit Boards). The TSM120NA03CR RLG works with a logic-level gate-to-source voltage Vgs. It is a normally-on type device and operating the gate voltage at a voltage greater than the logic-level threshold voltage Vth causes it to turn on and completing the source-drain path. Also, changing the drain-source voltage Vds can affect the device’s resistance and its power dissipation by modulating the current. The main purpose of the TSM120NA03CR RLG is to act as a low-power electronic switch in electronic circuits. It is mainly used to switch power signals in microcontrollers, motor controllers, and other devices that require a low-power switch with a high switching speed. It is also used in automotive applications such as motor control and DC-DC converters. One of the primary advantages of using the TSM120NA03CR RLG is its small total package size. This allows designers to create smaller, more compact and efficient designs for power circuits and switch applications. Also, the RLG offers a low thermal resistance and a low total gate charge, making it suitable for low-power switch applications. Finally, its high switching frequency makes it ideal for use in high-speed applications. In conclusion, the TSM120NA03CR RLG is a popular single n-channel MOSFET used in a wide range of applications. It offers a low total gate charge, a low thermal resistance, and a high switching frequency. It is mainly used as a low-power electronic switch in electronic circuits and can be used in automotive and telecom applications. Its small total package size also makes it ideal for use in high-density circuits and switch applications.

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