Allicdata Part #: | TSM120N10PQ56RLGTR-ND |
Manufacturer Part#: |
TSM120N10PQ56 RLG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET N-CH 100V 58A 8PDFN |
More Detail: | N-Channel 100V 58A (Tc) 36W (Tc) Surface Mount 8-P... |
DataSheet: | TSM120N10PQ56 RLG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3902pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 36W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PDFN (5x6) |
Package / Case: | 8-PowerTDFN |
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In modern electronics, power MOSFETs are important devices used in various applications. TSM120N10PQ56 RLG is one special type of power MOSFETs, which shows robust functionality and reliable performance. This article introduces the application field and working principle of TSM120N10PQ56 RLG.
Application Field of TSM120N10PQ56 RLG
TSM120N10PQ56 RLG is a high-voltage, high-density enhancement mode power MOSFET. It is designed for use in high efficiency, high frequency off-line, switched-mode power supply (SMS) and dc-to-dc converter applications. Its features include low Gate charge, low input capacitance, low RDS(on), high blocking voltage (VDSS) and extremely low on-resistance per Silicon area. With these features, TSM120N10PQ56 RLG can be used for high efficiency, high frequency resonant converters, active OR-ing circuits, load switches and a variety of other applications.
Working Principle of TSM120N10PQ56 RLG
The working principle of TSM120N10PQ56 RLG begins with voltage, as it is an enhancement-mode power MOSFET and must be driven by sufficient gate source voltage in order to achieve significant conduction. The Voltage is applied to the Gate of the power MOSFET, which causes it to open. This in turn allows a source voltage to be applied across the Drain and Source electrodes, allowing current to flow. The resistance of the MOSFET itself is very low, allowing current to flow without much voltage drop.
The current then continues on from the drain side of the power MOSFET and can either be connected directly to a load, or be fed into other active circuit components for further processing. There may be a number of power MOSFETs arranged in a circuit and configured to work together in order to create more complex functions. When the gate voltage is lowered or the circuit is electrically disconnected, the power MOSFET will become “nonconductive”, turning off the current flow.
Conclusion
This article has provided an overview of the application field and working principle of TSM120N10PQ56 RLG. It has been used in many important high efficiency, high frequency SMS and DC-DC converters due to its robust functionality and reliable performance. It is highly versatile and can easily be configured in various circuits according to user needs. With this information, readers can better understand how TSM120N10PQ56 RLG works and the type of applications it can be used in.
The specific data is subject to PDF, and the above content is for reference
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