TSM150NB04CR RLG Discrete Semiconductor Products |
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Allicdata Part #: | TSM150NB04CRRLGTR-ND |
Manufacturer Part#: |
TSM150NB04CR RLG |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | MOSFET SINGLE N-CHANNEL TRENCH |
More Detail: | N-Channel 40V 10A (Ta), 41A (Tc) 3.1W (Ta), 56W (T... |
DataSheet: | TSM150NB04CR RLG Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.17701 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 41A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1092pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 56W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-PDFN (5x6) |
Package / Case: | 8-PowerLDFN |
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TSM150NB04CR RLG Application Field and Working Principle
Introduction
The TSM150NB04CR RLG is an integrated circuit within the family of special power MOSFETs made by Toshiba. Its single-phase rectifier bridge/switching application is suitable for several portable applications such as notebook PCs, digital equipment, and printer power supplies. The package is small and the topology of the rectifier bridge P-MOSFETs enables a low on-state resistance for improved efficiency.
Application Field
The TSM150NB04CR is suitable for a variety of switched-mode power supplies, especially those used in portable electronic devices. Due to its small size, this component is suitable for applications where space is at a premium. It can also be used for voltage clamps and for general power supply rectification.
Features
The TSM150NB04CR is a special power MOSFET with an extremely low avalanche energy (250mV). It features advanced circuitry consisting of an optimized insulation structure, low power loss, low distortion, and low on-state resistance. Additionally, it has a higher voltage rating and can handle larger output currents than standard MOSFETs. While in use, it has built-in protection circuitry that protects the component from any damage caused by the instantaneous surge current in common rectifier applications.
Working Principle
MOSFETs, or metal-oxide-semiconductor field-effect transistors, are transistors that use an applied voltage to control the conductivity of a channel between source and drain terminals. In the case of the TSM150NB04CR, this transistor is special in the sense that it is a single-phase rectifier bridge MOSFET, meaning that it contains special circuitry that creates a bridge rectifier circuit within its structure. This bridge rectifier functions in a similar way to a full bridge rectifier circuit, creating an AC waveform from DC and allowing energy to be efficiently transferred and currents to be efficiently controlled.
The TSM150NB04CR RLG enjoys excellent switching performance, low distortion, low power loss and high input impedance, meaning that a wide range of applications in the field of power tools, poi-light, LCD TV and computer peripheral controllers can be satisfied.
Conclusion
The TSM150NB04CR RLG is a special power MOSFET with advanced circuitry consisting of an optimized insulation structure, low power loss, low distortion, and low on-state resistance. It is suitable for a variety of switched-mode power supplies, especially those used in portable electronic devices. It has built-in protection circuitry that protects the component from any damage caused by the instantaneous surge current in common rectifier applications. Its excellent switching performance, low distortion, and low power loss give this component the versatility to be used in a variety of scenarios.
The specific data is subject to PDF, and the above content is for reference
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